VS-150U(R).. Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 150 A
FEATURES
• Diffused diode
• High voltage ratings up to 1200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Hermetic metal case
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-8 (DO-205AA)
RoHS
COMPLIANT
TYPICAL APPLICATIONS
• Welders
• Power supplies
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
150 A
DO-8 (DO-205AA)
Single
• Machine tool controls
• High power drives
• Medium traction applications
• Battery charges
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
150
125
235
3000
3140
45
41
600 to 1200
-40 to +180
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
60
VS-150U(R)..
80
100
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
700
900
1100
1300
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93490
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-150U(R).. Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
r
f
V
F(T0)
V
FM
I
pk
= 600 A, T
J
= 25 °C, t
p
= 10 ms sinusoidal wave
TEST CONDITIONS
180° conduction, half sine wave
DC at 110 °C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
T
J
= T
J
maximum
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
150
125
235
3000
3140
45
41
0.97
0.80
1.47
kA
2
s
m
V
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward, non-repetitive
surge current
Maximum I
2
t for fusing
Slope resistance
Threshold voltage
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads tighting on hexagon
Maximum allowable mounting torque + 0 - 20 %
Lubricated threads tighting on hexagon
Not lubricated threads tighting on nut
Lubricated threads tighting on nut
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-40 to +180
0.3
0.1
17
14.5
14
12
130
g
DO-8 (DO-205AA)
N·m
UNITS
°C
K/W
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.031
0.038
0.048
0.071
0.120
RECTANGULAR CONDUCTION
0.023
0.040
0.053
0.075
0.121
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
150U(R)..
Series
R
thJC
(DC) = 0.3 K/W
160
Conduction Angle
180
150U(R)..
Series
R
thJC
(DC) = 0.3 K/W
160
Conduction Period
30 °
60 °
90 °
120 °
180 °
100
DC
140
140
120
120 °
90 °
80
0
50
100
150
180 °
30°
60 °
120
100
80
0
40
80
120
160
200
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93490
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150U(R).. Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
300
180 °
250
200
150
RMS Limit
120 °
90 °
60 °
30 °
0.2
K/
W
Rt
h
S
A
=0
.0
5
K/
W
-D
0.6
100
Conduction Angle
50
0
0
50
100
150
200
150U(R) ..
Series
T
j
= 180 °C
K/W
K/W
0.4
elt
a
R
1.2 K
/W
100
120
140
160
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
300
180 °
250
200
150
100
50
0
0
50
100
150
200
250
300
100
120
140
160
180
Conduction Period
120 °
90 °
60 °
30 °
0.4
Rt
h
S
A
RMS Limit
DC
0.2
=0
K/W
.05
K/
W
K/W
0.6
K/W
0.8 K
/W
-D
elt
aR
150U(R) ..
Series
Tj = 180 °C
1.2 K/W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Peak Half
Sine
Wave Forward Current (A)
Peak Half
Sine
Wave Forward Current (A)
3500
3000
2500
2000
1500
1000
500
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following
Surge.
Initial Tj = 180 °C
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
4000
3500
3000
2500
2000
1500
1000
500
0.01
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 180 °C
No Voltage Reapplied
Rated V
rrm
Reapplied
Per Junction
Per Junction
10
100
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Jan-18
Document Number: 93490
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150U(R).. Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
10 000
1000
100
Tj = 25 °C
Tj = 180 °C
10
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady State
Value
R
thJC
= 0.3 K/W
(DC Operation)
0.1
150U(R).. Series
0.01
0.001
0.01
0.1
1
10
t -
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 11-Jan-18
Document Number: 93490
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150U(R).. Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
15
2
0
3
U
4
R
5
120
6
D
7
L
8
- Vishay Semiconductors product
- 15 = essential part number
- 0 = standard device
- U = stud normal polarity (cathode to stud)
- None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
- Diffused diode
- L = stud base 1/2"-24UNF-2A
threads
None = stud base 3/8"-24UNF-2A
threads
6
7
8
Note
•
For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95315
Revision: 11-Jan-18
Document Number: 93490
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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