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1N4148-T

产品描述Diodes - General Purpose, Power, Switching 500mW 75Vrrm 4ns
产品类别分立半导体    二极管   
文件大小45KB,共2页
制造商Diodes Incorporated
标准
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1N4148-T概述

Diodes - General Purpose, Power, Switching 500mW 75Vrrm 4ns

1N4148-T规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Diodes Incorporated
零件包装代码DO-35
包装说明ROHS COMPLIANT, GLASS PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID611725
Samacsys Pin Count2
Samacsys Part CategoryDiode
Samacsys Package CategoryDiodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name1N4148-T
Samacsys Released Date2018-08-03 15:45:15
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
JESD-609代码e2
湿度敏感等级1
最大非重复峰值正向电流2 A
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流0.15 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
最大功率耗散0.5 W
认证状态Not Qualified
最大重复峰值反向电压75 V
最大反向恢复时间0.004 µs
表面贴装NO
端子面层Tin/Silver (Sn96.5Ag3.5)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

下载PDF文档
1N4148 / 1N4448
FAST SWITCHING DIODE
Please click here to visit our online spice models database.
Features
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
Case: DO-35
Case Material: Glass
Moisture Sensitivity: Level 1 per J-STD-020D
Leads: Solderable per MIL-STD-202, Method 208
Terminals: Finish
Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 2
Weight: 0.13 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0s
@ t = 1.0μs
I
FSM
1N4148
100
75
53
300
150
1.0
2.0
500
1N4448
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
500
1.68
300
-65 to +175
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
1N4148
1N4448
1N4448
V
FM
Min
0.62
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
μA
μA
μA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
J
= 150°C
V
R
= 20V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100Ω
Maximum Peak Reverse Current
Total Capacitance
Reverse Recovery Time
Notes:
I
RM
C
T
t
rr
1. Valid provided that device terminals are kept at ambient temperature.
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see
EU Directive Annex Notes 5 and 7.
1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2
1 of 2
www.diodes.com
March 2008
© Diodes Incorporated

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