HCF4073B
TRIPLE 3 INPUT AND GATE
s
s
s
s
s
s
MEDIUM SPEED OPERATION :
t
PD
= 60ns (TYP.) at V
DD
= 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF4073BEY
HCF4073BM1
DESCRIPTION
The HCF4073B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4073B TRIPLE 3 INPUT AND GATE
provides the system designer with direct
implementation of the AND function and
supplement the existing family of CMOS gates.
PIN CONNECTION
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
HCF4073M013TR
s)
t(
uc
T&R
September 2001
1/7
HCF4073B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
13, 8, 5
12, 2, 4
11, 1, 3
10, 9, 6
7
14
SYMBOL
G, C, F
H, B, E
I, A, D
L, J, K
V
SS
V
DD
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
INPUTS
G, C, F
L
X
X
H
X : Don’t Care
OUTPUTS
I, A, D
X
X
L
H
L, J , K
L
L
L
H
H, B, E
X
L
X
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
O
so
b
T
op
te
le
Supply Voltage
Input Voltage
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
Value
±
10
200
100
s)
t(
uc
Unit
V
V
mA
mW
mW
°C
°C
-0.5 to +22
-0.5 to V
DD
+ 0.5
-55 to +125
-65 to +150
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
Unit
V
V
°C
Operating Temperature
2/7
HCF4073B
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
I
(V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
V
O
(V)
|I
O
| V
DD
(µA) (V)
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
T
A
= 25°C
Min.
Typ.
0.01
0.01
0.01
0.02
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
-3.2
-1
-2.6
-6.8
1
2.6
6.8
3.5
7
11
Max.
0.25
0.5
1
5
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
Value
-40 to 85°C
Min.
Max.
7.5
15
30
150
4.95
9.95
14.95
0.05
0.05
0.05
-55 to 125°C
Min.
Max.
7.5
15
30
150
Unit
I
L
Quiescent Current
µA
V
OH
High Level Output
Voltage
Low Level Output
Voltage
High Level Input
Voltage
Low Level Input
Voltage
Output Drive
Current
V
OL
V
IH
V
IL
I
OH
I
OL
Output Sink
Current
Input Leakage
Current
Input Capacitance
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
V
I
I
C
I
Any Input
Any Input
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Symbol
Parameter
O
so
b
t
PLH
t
PHL
Propagation Delay Time
te
le
r
P
uc
od
s)
t(
5
10
15
5
10
15
bs
-O
et
l
o
5
P
e
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
od
r
1.5
3
4
s)
t(
uc
1.5
3
4
V
V
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
mA
mA
µA
pF
±10
-5
±0.1
7.5
±1
Test Condition
Min.
Value (*)
Typ.
125
60
45
100
60
40
Max.
250
125
90
200
100
80
Unit
V
DD
(V)
ns
t
TLH
t
THL
Output Transition Time
ns
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
3/7
HCF4073B
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200KΩ
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
4/7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
