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70T3519S166BCGI

产品描述SRAM 256Kx36 STD-PWR 2.5V DUAL PORT RAM
产品类别存储    存储   
文件大小392KB,共28页
制造商IDT (Integrated Device Technology)
标准
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70T3519S166BCGI概述

SRAM 256Kx36 STD-PWR 2.5V DUAL PORT RAM

70T3519S166BCGI规格参数

参数名称属性值
Brand NameIntegrated Device Technology
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码CABGA
包装说明LBGA, BGA256,16X16,40
针数256
制造商包装代码BCG256
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Samacsys DescriptionCHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
最长访问时间12 ns
其他特性PIPELINED OR FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)166 MHz
I/O 类型COMMON
JESD-30 代码S-PBGA-B256
JESD-609代码e1
长度17 mm
内存密度9437184 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端口数量2
端子数量256
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA256,16X16,40
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5,2.5/3.3 V
认证状态Not Qualified
座面最大高度1.7 mm
最大待机电流0.02 A
最小待机电流2.4 V
最大压摆率0.51 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度17 mm
Base Number Matches1

文档预览

下载PDF文档
Features:
HIGH-SPEED 2.5V
256/128/64K x 36
IDT70T3519/99/89S
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.4 (200MHz)/3.6ns (166MHz)/
4.2ns (133MHz)(max.)
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 200MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Interrupt and Collision Detection Flags
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 256-pin Ball Grid Array (BGA), a 208-pin
Plastic Quad Flatpack (PQFP) and 208-pin fine pitch Ball
Grid Array (fpBGA)
Supports JTAG features compliant with IEEE 1149.1
Due to limited pin count JTAG is not supported on the 208-
pin PQFP package
Green parts available, see ordering information
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
0c 1c
c
0d 1d
d
1d 0d
d
1c 0c
c
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
R/W
R
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B B
WWW
2 3 3
L L R
B
W
2
R
B B
WW
1 0
R R
1
0
1/0
CE
0R
CE
1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
1d 0d 1c 0c 1b 0b 1a 0a
0a 1a 0b 1b 0c 1c 0d 1d
0/1
,
FT/PIPE
R
FT/PIPE
L
0/1
abc d
d cba
256/128/64K x 36
MEMORY
ARRAY
I/O
0L
- I/O
35L
Din_L
Din_R
I/O
0R
- I/O
35R
CLK
L
A
17L(1)
A
0L
REPEAT
L
ADS
L
CNTEN
L
A
17R(1)
CLK
R
,
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
TDI
TCK
TMS
TRST
CE
0 L
CE1L
R /
W
L
INTERRUPT
COLLISION
DETECTION
LOGIC
CE
0 R
CE1 R
R/
W
R
JTAG
TDO
COL
R
INT
R
COL
L
INT
L
ZZ
L
(2)
NOTES:
1. Address A
17
is a NC for the IDT70T3599. Also, Addresses A
17
and A
16
are NC's for the IDT70T3589.
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx
and the sleep mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
CONTROL
LOGIC
ZZ
R
(2)
5666 drw 01
MARCH 2014
DSC 5666/11
1
©2014 Integrated Device Technology, Inc.

 
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