PD - 95758A
IRF3305PbF
Features
l
Designed to support Linear Gate Drive
Applications
l
175°C Operating Temperature
l
Low Thermal Resistance Junction - Case
l
Rugged Process Technology and Design
l
Fully Avalanche Rated
l
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
G
S
I
D
= 75A
Description
This HEXFET Power MOSFET utilizes a rugged
planar process technology and device design,
which greatly improves the Safe Operating Area
(SOA) of the device. These features, coupled
with 175°C junction operating temperature and
"low thermal resistance of 0.45C/W"
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
TO-220AB
Max.
140
99
75
560
330
2.2
± 20
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
A
Units
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ã
h
470
860
See Fig.12a, 12b, 15, 16
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
y
y
i
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
i
www.irf.com
07/23/10
1
IRF3305PbF
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.055
–––
–––
–––
–––
–––
–––
–––
100
21
45
16
88
43
34
4.5
7.5
3650
1230
450
4720
930
1490
–––
–––
8.0
4.0
–––
25
250
200
-200
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
mΩ
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 75A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
R
G
= 2.6
Ω
V
GS
= 10V
Between lead,
e
nC
e
e
ns
nH
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
pF
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
57
130
75
A
560
1.3
86
190
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.17mH
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V. Part not
avalanche performance.
recommended for use above this value.
This value determined from sample failure population. 100%
Pulse width
≤
1.0ms; duty cycle
≤
2%.
tested to this value in production.
C
oss
eff. is a fixed capacitance that gives the
R
θ
is measured at T
J
of approximately 90°C.
same charging time as C
oss
while V
DS
is rising
from 0 to 80% V
DSS
.
2
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IRF3305PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
80
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
60
TJ = 175°C
40
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VDS = 25V
≤
60µs PULSE WIDTH
20
VDS = 10V
0
0
20
40
60
80
100
120
140
ID, Drain-to-Source Current (A)
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF3305PbF
7000
6000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
16
VDS = 44V
VDS= 28V
C, Capacitance (pF)
5000
4000
3000
2000
1000
0
1
Ciss
12
8
Coss
4
Crss
0
10
100
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
1000
100
100µsec
10.0
TJ = 25°C
1.0
10
1msec
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
DC
100
1000
0.1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3305PbF
140
LIMITED BY PACKAGE
120
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 75A
VGS = 10V
2.0
100
80
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
0.01
τ
J
Ri (°C/W)
τi
(sec)
τ
C
0.1758 0.00045
τ
0.228
0.0457
0.004565
0.01858
τ
1
τ
2
τ
3
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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