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RN1113FS(TPL3)

产品描述Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 47Kohms NPN
产品类别分立半导体    晶体管   
文件大小273KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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RN1113FS(TPL3)概述

Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 47Kohms NPN

RN1113FS(TPL3)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1

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RN1112,RN1113
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1112, RN1113
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduced number of parts and simplified process
Complementary to RN2112 and RN2113
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1112
RN1113
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
120
15.4
32.9
Typ.
0.1
250
3
22
47
Max
100
100
700
0.3
6
28.6
61.1
Unit
nA
nA
V
MHz
pF
kΩ
Start of commercial production
1990-12
1
2014-03-01

RN1113FS(TPL3)相似产品对比

RN1113FS(TPL3) RN1113(T5L,F,T) RN1112(T5L,F,T)
描述 Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 47Kohms NPN TRANS PREBIAS NPN 0.1W SSM TRANS PREBIAS NPN 0.1W SSM
晶体管类型 - NPN - 预偏压 NPN - 预偏压
电流 - 集电极(Ic)(最大值) - 100mA 100mA
电压 - 集射极击穿(最大值) - 50V 50V
电阻器 - 基底(R1) - 47 kOhms 22 kOhms
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) - 120 @ 1mA,5V 120 @ 1mA,5V
不同 Ib,Ic 时的 Vce 饱和值(最大值) - 300mV @ 250µA,5mA 300mV @ 250µA,5mA
电流 - 集电极截止(最大值) - 100nA(ICBO) 100nA(ICBO)
频率 - 跃迁 - 250MHz 250MHz
功率 - 最大值 - 100mW 100mW
安装类型 - 表面贴装 表面贴装
封装/外壳 - SC-75,SOT-416 SC-75,SOT-416
供应商器件封装 - SSM SSM

 
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