Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
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(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Rev. 05 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
1.3 Applications
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Fan control
Variable valve timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 2; [1]
see
Figure 3
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C; V
GS
= 10 V
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Min
-
-
Typ
-
-
Max
40
155
Unit
V
A
Static characteristics
R
DSon
I
D
/I
sense
S
F(TSD)
V
F(TSD)
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
[1]
-
585
-1.4
648
4.7
615
-1.54
658
6
645
-1.68
668
mΩ
mV/K
mV
Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
mb
Pinning information
Symbol
G
ISENSE
A
D
K
KS
S
D
Description
gate
Current sense
anode
drain
cathode
Kelvin source
source
mounting base; connected to
drain
4
123 567
G
mb
D
A
Simplified outline
Graphic symbol
SOT427
(D2PAK)
I
sense
S
K
Kelvin source
sym110
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7C06-40AITE D2PAK
plastic single-ended surface-mounted package (D2PAK); 7 leads (one
lead cropped)
Version
SOT427
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
2 of 14
NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3 [1]
[2]
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2
I
DM
P
tot
I
GS(CL)
peak drain current
total power dissipation
gate-source clamping
current
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-
-
-100
Max
40
40
20
155
75
75
620
272
10
50
100
Unit
V
V
V
A
A
A
A
W
mA
mA
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
V
isol(FET-TS
FET to temperature
sense diode isolation
D)
voltage
T
stg
T
j
I
S
I
SM
E
DS(AL)S
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
electrostatic discharge
voltage
[1]
[2]
-55
-55
-
-
-
-
175
175
155
75
620
1.46
°C
°C
A
A
A
J
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
3 of 14
NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
160
I
D
(A)
120
03ng16
80
capped at 75A
due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Continuous drain current as a function of
mounting base temperature
10
3
I
D
(A)
10
2
capped at 75 A due to package
DC
10
Limit R
DSon
= V
DS
/I
D
03ni28
t
p
= 10 µs
100 µs
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
4 of 14
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