PN3568
PN3568
NPN General Purpose Amplifier
• This device is designed for general purpose, medium power amplifiers
and switches requiring collector currents to 500mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
60
80
5.0
1.0
- 55 ~ 150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 30mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
A
= 75°C
V
EB
= 4V, I
C
= 0
V
CE
= 1.0V, I
C
= 30mA
V
CE
= 1.0V, I
C
= 150mA
I
C
= 150mA, I
B
= 15mA
V
CE
= 1.0V, I
C
= 150mA
V
CB
= 10V, f = 1.0MHz
V
EB
= 0.5V, f = 1.0MHz
I
C
= 50mA, V
CE
= 10V, f = 20MHz
3.0
40
40
Min.
60
80
5.0
50
5.0
25
Max.
Units
V
V
V
nA
µA
nA
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
120
0.25
1.1
20
80
30
V
V
pF
Small Signal Characteristics
C
ob
Output Capacitance
C
ib
h
fe
Input Capacitance
Small Signal Current Gain
* Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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No Identification Needed
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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