PD - 96995E
IRF6646
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
12nC
R
DS(on)
7.6mΩ@ 10V
80V max ±20V max
36nC
V
gs(th)
3.8V
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MN
DirectFET ISOMETRIC
Description
The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input voltage
range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
0.05
Typical RDS(on) (Ω)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
80
±20
12
9.6
68
96
230
7.2
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
ID= 7.2A
VDS= 40V
VDS= 16V
A
mJ
A
0.04
0.03
0.02
0.01
0
4
T J = 25°C
6
8
10
12
T J = 125°C
ID = 7.2A
14
16
40
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
QG Total Gate Charge (nC)
Typical Total Gate Charge vs. Gate-to-Source
Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 8.8mH, R
G
= 25Ω, I
AS
= 7.2A.
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1
11/04/05
IRF6646
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min. Typ. Max. Units
80
–––
–––
3.0
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
7.6
–––
-11
–––
–––
–––
–––
–––
36
7.6
2.0
12
14
14
18
1.0
17
20
31
12
2060
480
120
2180
310
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
9.5
mΩ V
GS
= 10V, I
D
= 12A
c
4.9
V V
DS
= V
GS
, I
D
= 150µA
––– mV/°C
20
µA V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
250
100
nA V
GS
= 20V
V
GS
= -20V
-100
–––
S V
DS
= 10V, I
D
= 7.2A
50
V
DS
= 40V
–––
–––
nC V
GS
= 10V
I
D
= 7.2A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 17
nC
Ω
V
DS
= 16V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
c
I
D
= 7.2A
ns
R
G
=6.2Ω
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 64V, f=1.0MHz
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
36
48
2.5e
A
96
1.3
54
72
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
c
T
J
= 25°C, I
F
= 7.2A, V
DD
= 40V
di/dt = 100A/µs
c
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
Thermally limited and used R
θja
to calculate.
2
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IRF6646
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
c
c
f
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
cg
dg
eg
fg
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
τ
4
Ri (°C/W)
τi
(sec)
0.1
0.678449 0.00086
17.29903 0.57756
17.56647
9.470128
8.94
106
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6646
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
6.0V
BOTTOM
10
6.0V
10
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
10
100
Fig 4.
Typical Output Characteristics
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Output Characteristics
2.0
ID = 12A
VGS = 10V
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current
(Α)
VDS = 10V
≤60µs
PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
1.5
1.0
1
0.5
0.1
3
V
4
5
6
7
8
, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical
GS
Transfer Characteristics
10000
Fig 7.
Normalized On-Resistance vs. Temperature
45
40
35
Typical RDS(on) (
Ω)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
C, Capacitance(pF)
Ciss
1000
30
25
20
15
10
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
5
0
10
30
50
70
90
110
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs. Drain Current
4
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IRF6646
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec
10
1
T J = 150°C
T J = 25°C
T J = -40°C
1
10msec
0.1
T A = 25°C
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.01
T J = 150°C
Single Pulse
0.01
0.10
1.00
10.00
100.00
Fig 10.
Typical Source-Drain Diode Forward Voltage
14
Typical VGS(th) Gate threshold Voltage (V)
6.0
VDS, Drain-to-Source Voltage (V)
Fig11.
Maximum Safe Operating Area
12
ID, Drain Current (A)
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
5.0
ID
ID
ID
ID
= 150µA
= 250µA
= 1.0mA
= 1.0A
4.0
3.0
2.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Ambient Temperature
1000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
900
800
700
600
500
400
300
200
100
0
25
50
75
3.3A
4.0A
BOTTOM 7.2A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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