General Purpose Silicon Rectifiers
1N4001-G Thru. 1N4007-G
Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Features
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability.
-High soldering temperature guarantee: 260
O
C/10
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension.
1.0(25.40) Min.
DO-41
0.205(5.20)
0.160(4.20)
Mechanical data
-Case: transfer molded plastic, DO-41
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD-
202E, method 208C
-Mounting position: Any
Dimensions in inches and (millimeter)
0.034(0.90)
0.028(0.70)
0.107(2.70)
0.080(2.00)
1.0(25.40) Min.
-Weight: 0.012ounce, 0.33 grams
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
O
0.375"(9.5mm) Lead Length @T
A
=55 C
Peak Forward Surge Current,
8.3mS single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @1.0A
Maximum DC Reverse Current at Rated
DC Blocking voltage per element
T
A
=25
O
C
T
A
=100 C
O
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
1N4001
-G
50
35
50
1N4002
-G
100
70
100
1N4003
-G
200
140
200
1N 4004
-G
400
280
400
1.0
1N4005
-G
600
420
600
1N4006
-G
800
560
800
1N4007
-G
1000
700
1000
Unit
V
V
V
A
I
FSM
V
F
I
R
I
R(AV)
C
J
R
θJA
T
J
T
STG
30
A
V
μA
μA
P
F
O
1.1
5.0
50
30
15
60
-55 ~ +150
-55 ~ +150
Maximum Full Load Reverse Current,full cycle
average 0.375”(9.5mm)lead length at T
L
=75
O
C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Ttemperature Range
C/W
O
C
C
O
NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm
2
copper pads to each terminal.
REV:A
QW-BG013
Page 1
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( 1N4001 -G Thru. 1N4007-G )
Fig.1 Typical Forward Current
Derating Curve
1.2
35
Fig.2 Maximum. Non-Repetitive Peak
Forward Surge Current
Ι
FSM
, Peak Forward Surge Current (A)
8.3mS, single half
sine-wave, JEDEC
method.
T
J
=T
Jmax
I
(AV)
, Average Forward Current (A)
1.0
30
25
20
15
10
5
0
0.8
0.6
0.4
Single phase
Half wave, 60Hz
Resistive or
inductive load
0.2
0
0
25
50
75
100
125
150
O
175
1
2
5
10
20
50
100
T
A
, Ambient Temperature (
C)
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
I
R
, Instantaneous Reverse Current (mA)
10
10
Fig.4 Typical Reverse Characteristics
I
F
, Instantaneous Forward Current (A)
T
J
=100
O
C
1.0
1.0
0.1
0.1
Pulse width=300μs.
1% duty cycle
O
T
J
=25 C
T
J
=25
O
C
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0
20
40
60
80
100
120
140
V
F
, Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
100
f=1MHz
O
T
J
=25 C
C
J
, Capacitance (pF)
10
10
0.1
1
10
100
V
R
, Reverse Voltage (V)
REV:A
QW-BG013
Page 2
Comchip Technology CO., LTD.
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
