Power Module
1200V 75A IGBT Module
MG1275W-XBN2MM
Features
• High level of
integration—only one
power semiconductor
module required for the
whole drive
• Low saturation voltage
and positive temperature
coefficient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Industry standard
package with insulated
copper base plate and
soldering pins for PCB
mounting
• Temperature sense
included
RoHS
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
T
J max)
T
J op
T
stg
V
isol
CTI
M
d
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Mounting Torque
Recommended (M5)
AC, t=1min
250
2.5
300
5
N·m
g
-40
-40
3000
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1200
105
75
150
1150
V
A
A
A
A
2
s
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=25°C
1200
±20
105
75
150
348
V
V
A
A
A
W
Parameters
Test Conditions
Values
Unit
MG1275W-XBN2MM
256
1
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 75A IGBT Module
Electrical and Thermal Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
ICES
I
GES
R
Gint
Q
ge
C
ies
C
RES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
t
RR
I
RRM
E
rec
R
thJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
I
F
=75A, V
GE
=0V, T
J
=25°C
I
F
=75A, V
GE
=0V, T
J
=125°C
I
F
=75A, V
R
=600V
di
F
/dt=2000A/µs
T
J
=125°C
1.65
1.65
300
85
6.5
0.6
V
V
ns
A
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
V
CC
=600V
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
I
C
=75A
R
G
=4.7Ω
V
GE
=±15V
Inductive Load
V
CE
=600V, I
C
=75A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS , V
GE
=15V; T
J
=125°C , V
CC
=900V
V
CE
=V
GE
, I
C
=3.0mA
I
C
=75A, V
GE
=15V, T
J
=25°C
I
C
=75A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±15V, T
J
=125°C
-400
10
0.7
5.3
0.2
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
300
0.36
5.0
5.8
1.7
1.9
1
10
400
6.5
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance (Per IGBT)
Junction-to-Case Thermal Resistance (Per Diode)
MG1275W-XBN2MM
257
2
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 75A IGBT Module
Diode-Rectifier Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
V
RRM
I
F(AV)
I
FRM
I
2
t
Parameters
Repetitive Reverse Voltage
Average Forward Current
Non-Repetitive Surge Forward
Current
Test Conditions
T
J
=25°C
T
C
=80°C
T
J
=45°C, t=10ms, 50Hz
T
J
=45°C, t=8.3ms, 60Hz
T
J
=45°C, t=10ms, 50Hz
T
J
=45°C, t=8.3ms, 60Hz
Values
1600
75
450
400
1012
800
Unit
V
A
A
A
2
s
Diode-Rectifier Electrical and Thermal Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
V
F
I
R
R
thJCD
Parameters
Forward Voltage
Reverse Leakage Current
Junction-to-Case Thermal
Resistance (Per Diode)
Test Conditions
I
F
=75A, T
J
=25°C
I
F
=75A, T
J
=125°C
V
R
=1600V, T
J
=25°C
V
R
=1600V, T
J
=125°C
Min
Typ
1.25
1.15
50
1
0.66
Max
Unit
V
V
μA
mA
K/W
Brake-Chopper Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1200
35
25
50
200
V
A
A
A
A
2
s
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=25°C
1200
±20
55
40
80
195
V
V
A
A
A
W
Parameters
Test Conditions
Values
Unit
MG1275W-XBN2MM
258
3
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 75A IGBT Module
Brake-Chopper Electrical and Thermal Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
ICES
I
GES
R
Gint
Q
ge
C
ies
C
RES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
t
RR
I
RRM
E
rec
R
thJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
Junction-to-Case Thermal
Resistance (Per Diode)
I
F
=25A , V
GE
=0V, T
J
=25°C
I
F
=25A , V
GE
=0V, T
J
=125°C
I
F
=25A, V
R
=600V
di
F
/dt=-400A/µs
T
J
=125°C
1.55
1.54
200
20
1.5
1.22
V
V
ns
A
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
V
CC
=600V
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
Junction-to-Case Thermal
Resistance (Per IGBT)
I
C
=40A
R
G
=27Ω
V
GE
=±15V
Inductive Load
V
CE
=600V, I
C
=40A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS, V
GE
=15V; T
J
=125°C, V
CC
=900V
V
CE
=V
GE
, I
C
=1.5mA
I
C
=40A, V
GE
=15V, T
J
=25°C
I
C
=40A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±15V, T
J
=125°C
-400
6
0.33
2.5
0.11
90
90
30
50
420
520
70
90
4.1
6.0
3.1
3.6
160
0.62
5.0
5.8
1.8
2.05
0.25
2
400
6.5
V
V
V
μA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
NTC Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
R
25
B
25/50
Parameters
Resistance
Test Conditions
T
c
=25°C
Min
Typ
5
3375
Max
Unit
KΩ
K
MG1275W-XBN2MM
259
4
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 75A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
150
V
GE
=15V
Figure 2: Typical Output Characteristics
for IGBT Inverter
150
120
V
GE
=19V
V
GE
=17V
V
GE
=15V
V
GE
=13V
V
GE
=11V
V
GE
= 9V
120
90
60
30
0
0
T
j
=25°C
I
C
(A)
I
C
(A)
90
60
30
0
T
J
=125°C
T
j
=125°C
0.5
1.0
1.5 2.0
V
CE
V
2.5
3.0
3.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
V
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
150
V
CE
=20V
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
25
20
120
E
on
E
off
(mJ)
V
CE
=600V
I
C
=75A
V
GE
=±15V
T
j
=125°C
I
C
(A)
90
60
30
0
T
j
=25°C
E
on
15
10
5
0
E
off
T
j
=125°C
5
6
7
8
V
GE
9
V
10
11
12
0
10
20
R
G
30
Ω
40
50
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
30
25
20
V
CE
=600V
R
G
=4.7
Ω
V
GE
=±15V
T
j
=125°C
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
180
150
120
I
C
(A)
E
on
E
off
(mJ)
15
10
5
0
0
30
60
I
C
E
on
E
off
90
60
30
0
0
R
G
=4.7Ω
V
GE
=±15V
T
j
=125°C
90
A
120
150
200
400
600 800 1000 1200 1400
V
CE
V
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
MG1275W-XBN2MM
260
5
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