PD - 97018A
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
HEXFET
®
Power MOSFET
D
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
G
S
Description
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
IRF1405ZPbF
D
2
Pak
TO-262
IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Max.
150
110
75
600
230
1.5
± 20
Units
A
W
W/°C
V
mJ
A
mJ
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ã
h
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
y
y
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
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1
07/14/10
IRF1405Z/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.049
3.7
–––
–––
–––
–––
–––
–––
120
31
46
18
110
48
82
4.5
7.5
4780
770
410
2730
600
910
–––
–––
4.9
4.0
–––
20
250
200
-200
180
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 75A
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 75A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 44V
V
GS
= 10V
V
DD
= 25V
I
D
= 75A
R
G
= 4.4Ω
V
GS
= 10V
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
30
30
75
A
600
1.3
46
45
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 25V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
max. junction temperature. (See fig. 11).
repetitive avalanche performance.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.10mH
This value determined from sample failure population.
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V. Part not
100% tested to this value in production.
recommended for use above this value.
This is applied to D
2
Pak, when mounted on 1" square PCB
Pulse width
≤
1.0ms; duty cycle
≤
2%.
( FR-4 or G-10 Material ). For recommended footprint and
C
oss
eff. is a fixed capacitance that gives the same
soldering techniques refer to application note #AN-994.
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
2
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IRF1405Z/S/LPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
4.5V
10
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
T J = 150°C
ID, Drain-to-Source Current
(Α)
175
150
125
100
75
50
25
0
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
T J = 175°C
T J = 25°C
100
10
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
1
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF1405Z/S/LPbF
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 75A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 44V
VDS= 28V
C, Capacitance(pF)
10000
C iss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
1000
1.00
T J = 25°C
0.10
0.0
0.5
1.0
1.5
VGS = 0V
2.0
2.5
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1405Z/S/LPbF
150
125
ID, Drain Current (A)
2.5
Limited By Package
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
2.0
100
75
50
25
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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