PD - 96246
IRF8852PbF
l
l
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
HEXFET
®
Power MOSFET
V
DSS
25V
R
DS(on)
max
11.3m @V
GS
= 10V
15.4m @V
GS
= 4.5V
:
:
Id
7.8A
6.2A
Description
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for,
provides the
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designer with an extremely efficient and reliable
device for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (<1.2mm) allows it to fit easily
into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
25
7.8
6.2
62.4
1.0
0.64
0.01
± 20
-55 to + 150
Units
V
A
f
Power Dissipation
f
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
W
W/°C
V
°C
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
53
125
Units
°C/W
Notes
through
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
07/30/09
IRF8852PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
25
–––
–––
–––
1.35
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
9.2
12.5
1.8
–––
–––
–––
–––
–––
9.5
17.4
3.1
2.9
2.8
11.4
10.9
70.8
28.9
1151
295
134
–––
–––
11.3
15.4
2.35
1.0
150
100
-100
–––
–––
26.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.8A
mΩ
V
GS
= 4.5V, I
D
= 6.2A
V V
DS
= V
GS
, I
D
= 25µA
e
e
µA
nA
S
nC
nC
Ω
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 70°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 7.8A
I
D
= 7.8A,V
DS
= 13V, V
GS
= 4.5V
I
D
= 7.8A
V
DS
= 13V
V
GS
= 10V
V
DD
= 13V, V
GS
= 10V
I
D
= 1.0A
R
D
=13
Ω
R
G
=30
Ω
V
GS
= 0V
V
DS
= 20V
ƒ = 1.0MHz
Max.
6.5
7.8
Units
mJ
A
e
ns
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
32
17
1.3
A
62.4
1.0
48
26
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.3A, V
DD
= 20V
di/dt = 100A/µs
Ã
e
e
2
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IRF8852PbF
1000
TOP
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
0.1
2.5V
Tj
≤
60µs PULSE WIDTH
= 25°C
1
2.5V
≤
60µs PULSE WIDTH
0.1
Tj = 150°C
0.1
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.4
ID = 7.8A
VGS = 10V
10
T J = 150°C
1.2
1
T J = 25°C
1.0
0.8
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF8852PbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 7.8A
VDS= 20V
VDS= 13V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
4
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
TJ = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
T = 25°C
J
1msec
1
T A = 25°C
10msec
VGS = 0V
Tj = 150°C
Single Pulse
0.1
0
1
10
100
0.1
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8852PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
9
8
7
ID, Drain Current (A)
25
ID = 7.8A
20
6
5
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
15
T J = 125°C
T J = 25°C
10
5
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Typical On-Resistance Vs.
Gate Voltage
1000
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
Ri (°C/W)
2.65337
18.2380
74.5829
29.5446
τi
(sec)
0.00011
0.027128
0.64107
11.11
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.01
0.1
1
10
100
1000
0.01
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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