d. Maximum under Steady State conditions is 110 °C/W.
Steady State
Symbol
R
thJA
R
thJF
Typical
55
33
Maximum
62.5
40
Unit
°C/W
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
www.vishay.com
1
Si4900DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.7 A, V
GS
= 0 V
0.8
30
32
25
5
T
C
= 25 °C
2.6
20
1.2
60
50
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 8.8
Ω
I
D
≅
3.4 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 30 V, R
L
= 8.8
Ω
I
D
≅
3.4 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.3 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 4.3 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
665
75
40
13
6
2.3
2.6
2
15
65
15
10
10
15
20
10
25
100
25
15
15
25
30
15
ns
Ω
20
9
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 5 mA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.3 A
V
GS
= 4.5 V, I
D
= 3.9 A
V
DS
= 15 V, I
D
= 4.3 A
20
0.046
0.059
15
0.058
0.072
1
2.5
100
1
10
60
55
-6
3
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
Si4900DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
18
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5
V
GS
= 10 V thru 4 V
4
14
12
10
8
6
4
2
0
0.0
3V
3
2
T
C
= 125 °C
1
25 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.080
0.075
R
DS(on)
- On-Resistance (mΩ)
800
0.070
0.065
0.060
0.055
V
GS
= 10 V
0.050
200
0.045
0.040
0
2
4
6
8
10
12
14
16
18
20
0
0
C
rss
10
V
GS
= 4.5 V
C - Capacitance (pF)
1000
Transfer Characteristics
C
iss
600
400
C
oss
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 30 V
I
D
= 4.3 A
R
DS(on)
- On-Resistance
2.0
1.8
1.6
(Normalized)
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
0.6
- 50
V
GS
= 10 V
I
D
= 4.3 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si4900DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
20
T
J
= 150 °C
10
I
S
- Source Current (A)
0.12
0.11
0.10
0.09
0.08
0.07
I
D
= 4.3 A
0.06
0.05
0.04
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
T
J
= 25 °C
1
0.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
V
GS(th)
(V)
2.4
2.2
2.0
1.8
5
1.6
1.4
- 50
0
0.01
I
D
= 250 µA
20
25
On-Resistance vs. Gate-to-Source Voltage
Power (W)
15
10
- 25
0
25
50
75
100
125
150
0.1
1
10
Time (s)
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
100
µs
I
D
- Drain Current (A)
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
100 ms
1s
10 s
DC
1
0.01
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
Si4900DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6
4.0
3.5
5
3.0
4
Power Dissipation (W)
I
D
- Drain Current (A)
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
3
2
1
0
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
100
I
C
- Peak Avalanche Current (A)
10
1
0.000001
0.00001
0.0001
0.001
T
A
- Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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