a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62963
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
m
m
Backside View
4
D
Bump
Side
View
D
P-Channel MOSFET
Si8819EDB
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Ambient
c, d
t=5s
t=5s
Symbol
R
thJA
Typical
105
200
Maximum
135
260
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 185 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 330 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -12 V, V
GS
= 0 V
V
DS
= -12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
-5 V, V
GS
= -3.7 V
V
GS
= -3.7 V, I
D
= -1.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -2.5 V, I
D
= -1.5 A
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -1.5 V, I
D
= -0.1 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -6 V, R
L
= 4
Ω
I
D
≅
-1.5 A, V
GEN
= -8 V, R
g
= 1
Ω
V
DD
= -6 V, R
L
= 4
Ω
I
D
≅
-1.5 A, V
GEN
= -4.5 V, R
g
= 1
Ω
V
GS
= -0.1 V, f = 1 MHz
V
DS
= -6 V, V
GS
= -8 V, I
D
= -1.5 A
V
DS
= -6 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
V
DS
= -6 V, V
GS
= -4.5 V, I
D
= -1.5 A
-
-
-
-
-
-
-
-
-
-
-
620
140
130
12
7
0.9
1.9
15
17
23
44
30
7
16
58
31
-
-
-
17
8
-
-
-
30
45
90
60
15
30
120
60
ns
Ω
nC
pF
g
fs
V
DS
= -5 V, I
D
= -1.5 A
-12
-
-
-0.4
-
-
-
-
-5
-
-
-
-
-
-
-7
2.7
-
-
-
-
-
-
0.063
0.079
0.118
0.180
7
-
-
-
-0.9
± 0.2
±1
-1
-10
-
0.080
0.100
0.190
0.280
-
S
Ω
V
mV/°C
V
μA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
μA
A
S15-0346-Rev. B, 23-Feb-15
Document Number: 62963
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8819EDB
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -1.5 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -1.5 A, V
GS
= 0 V
T
A
= 25 °C
-
-
-
-
-
-
-
-
-
-0.82
47
26
16
31
-0.7
-15
-1.2
100
55
-
-
V
ns
nC
ns
A
Vishay Siliconix
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
10
-3
10
-4
I
GSS
-
Gate
Current (mA)
1.5
I
GSS
-
Gate
Current (A)
10
-5
10
-6
10
-7
10
-8
10
-9
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
V
GS
-
Gate-Source
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
T
J
= 25
°C
T
J
= 150
°C
T
J
= 25
°C
1.0
0.5
0.0
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
S15-0346-Rev. B, 23-Feb-15
Document Number: 62963
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8819EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
V
GS
= 5 V thru 3 V
12
V
GS
= 2.5 V
5
Vishay Siliconix
4
I
D
- Drain Current (A)
I
D
- Drain Current (A)
9
3
6
V
GS
= 2 V
2
T
C
= 25
°C
1
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
3
V
GS
= 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.4
V
GS
= 1.5 V
V
GS
= 1.8 V
R
DS(on)
- On-Resistance (Ω)
0.3
C - Capacitance (pF)
1000
800
C
iss
600
0.2
V
GS
= 2.5 V
0.1
V
GS
= 3.7 V
0
0
3
6
9
12
15
I
D
- Drain Current (A)
400
200
C
rss
0
0
C
oss
6
9
V
DS
- Drain-to-Source Voltage (V)
3
12
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
R
DS(on)
- On-Resistance (Normalized)
1.4
V
GS
= 3.7, 2.5 V, I
D
= 1.5 A
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 1.5 A
6
1.3
V
DS
= 6 V
1.2
V
GS
= 1.8 V, I
D
= 1.5 A
1.1
V
DS
= 3 V
4
V
DS
= 9.6 V
2
1.0
V
GS
= 1.5 V, I
D
= 0.1 A
0.9
0
0
3
6
9
12
Q
g
- Total
Gate
Charge (nC)
0.8
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0346-Rev. B, 23-Feb-15
On-Resistance vs. Junction Temperature
Document Number: 62963
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8819EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.20
Vishay Siliconix
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
I
S
-
Source
Current (A)
I
D
= 1.5 A
0.15
1
T
J
= 25
°C
0.10
T
J
= 125
°C
0.05
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.9
On-Resistance vs. Gate-to-Source Voltage
14
12
10
0.8
0.7
Power (W)
75
100
125
150
V
GS(th)
(V)
8
6
4
0.6
I
D
= 250 μA
0.5
0.4
2
0
0.001
0.3
- 50
- 25
0
25
50
T
J
- Temperature (°C)
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
R
DS(on)
*
Limited
10
I
D(on)
Limited
IDM
Limited
Single Pulse Power, Junction-to-Ambient
I
D
- Drain Current (A)
100
µs
1
1 ms
10 ms
0.1
T
A
= 25
°C
100 ms
10
s,
1s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0346-Rev. B, 23-Feb-15
Document Number: 62963
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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