Ordering number : ENA1743A
SFT1450
N-Channel Power MOSFET
40V, 21A, 28m
Ω
, Single TP/TP-FA
Features
•
•
http://onsemi.com
ON-resistance RDS(on)1=21m
Ω
(typ.)
Halogen free compliance
•
•
Input Capacitance Ciss=715pF(typ.)
Protection diode in
•
4.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
40
±20
21
84
1
23
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
1.5
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
SFT1450-H
6.5
5.0
4
2.3
1.5
0.5
SFT1450-TL-H
7.0
5.5
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
2, 4
Marking
(TP, TP-FA)
Packing Type (TP-FA) : TL
T1450
LOT No.
Electrical Connection
1
TL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/60910PA TKIM TC-00002332 No. A1743-1/9
SFT1450
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=21A, VGS=0V
VDS=20V, VGS=10V, ID=21A
See specified Test Circuit.
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=10.5A
ID=10.5A, VGS=10V
ID=5.5A, VGS=4.5V
Ratings
min
40
1
±10
1.7
5.4
21
40
715
85
65
10
42
42
38
14.4
3.8
3.1
0.96
1.2
28
56
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
10V
0V
VIN
VDD=20V
VIN
PW=10μs
D.C.≤1%
G
D
ID=10.5A
RL=1.9Ω
VOUT
P.G
SFT1450
50Ω
S
Ordering Information
Device
SFT1450-H
SFT1450-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and Halogen Free
No. A1743-2/9
SFT1450
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
ID -- VDS
10.0
V
8.0
V
30
ID -- VGS
Tc=
--2
2.0
2.5
3.0
6.0
V
25
Drain Current, ID -- A
Drain Current, ID -- A
16.0V
20
4.0V
15
10
VGS=3.5V
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
0.5
1.0
1.5
Tc=
75
°
C
--2
5
°
C
25
°
C
3.5
4.0
4.5
75
°
C
5.0
5.5
25
°
C
6.0
IT15552
140
160
IT15554
1.4
IT15556
4.5
V
Tc=25
°
C
Single pulse
VDS=10V
Single pulse
Drain-to-Source Voltage, VDS -- V
90
RDS(on) -- VGS
IT15551
80
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
Tc=25
°
C
Single pulse
70
60
50
40
30
20
10
0
--60
ID=10.5A
5.5A
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
=5.5
.5, I
D
=4
VGS
0.5
I
=1
0.0V,
D
=1
V GS
A
--40
--20
0
20
40
60
80
100
Gate-to-Source Voltage, VGS -- V
2
|
y
fs
|
-- ID
IT15553
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Case Temperature, Tc --
°
C
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
Single pulse
10
5
3
2
C
25
°
1.0
7
5
3
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0.01
7
5
3
2
0.001
0.2
0.4
Tc=
75
°
C
25
°
C
0.6
--25
°
C
C
25
°
= --
Tc
C
75
°
Source Current, IS -- A
7
0.8
1.0
Drain Current, ID -- A
2
IT15555
3
2
1000
SW Time -- ID
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
5
°
C
120
1.2
Single pulse
VGS=0V
Single pulse
Switching Time, SW Time -- ns
100
7
5
3
2
VDD=20V
VGS=10V
Ciss, Coss, Crss -- pF
td(off)
f=1MHz
7
5
3
2
100
7
5
3
Ciss
tf
10
7
5
3
2
0.1
2
3
td(on)
tr
Coss
Crss
5
7 1.0
2
3
5
7 10
2
3
5
2
0
5
10
15
20
25
30
35
40
Drain Current, ID -- A
IT15557
Drain-to-Source Voltage, VDS -- V
IT15558
No. A1743-3/9
SFT1450
10
9
VGS -- Qg
VDS=20V
ID=21A
Drain Current, ID -- A
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=84A(PW≤10μs)
ID=21A
DC
op
era
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
10
10
tio
n
10
μ
s
0
μ
s
ms
s
1m
Operation in
this area is
limited by RDS(on).
10
0m
s
0.1
0.1
Tc=25
°
C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
IT15559
30
Drain-to-Source Voltage, VDS -- V
PD -- Tc
IT15560
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
1.0
25
23
20
0.8
0.6
15
0.4
10
0.2
5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT15549
Case Temperature, Tc --
°C
IT15550
No. A1743-4/9
SFT1450
Taping Specification
SFT1450-TL-H
No. A1743-5/9
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