
MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Infineon(英飞凌) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | SMD/SMT |
| 封装 / 箱体 Package / Case | TO-263-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 77 A |
| Rds On - Drain-Source Resistance | 10.5 mOhms |
| Vgs - Gate-Source Voltage | 12 V |
| Qg - Gate Charge | 23 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Pd-功率耗散 Pd - Power Dissipation | 88 W |
| Channel Mode | Enhancement |
| 系列 Packaging | Cut Tape |
| 系列 Packaging | Reel |
| 高度 Height | 4.4 mm |
| 长度 Length | 10 mm |
| Transistor Type | 1 N-Channel |
| 类型 Type | Smps MOSFET |
| 宽度 Width | 9.25 mm |
| Fall Time | 4.8 ns |
| Rise Time | 87 ns |
| 工厂包装数量 Factory Pack Quantity | 3200 |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 6.8 ns |
| 单位重量 Unit Weight | 0.139332 oz |

| IRF3706STRLPBF | IRF3706PBF | |
|---|---|---|
| 描述 | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC |
| Product Attribute | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) |
| 产品种类 Product Category |
MOSFET | MOSFET |
| RoHS | Details | Details |
| 技术 Technology |
Si | Si |
| 安装风格 Mounting Style |
SMD/SMT | Through Hole |
| 封装 / 箱体 Package / Case |
TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V | 20 V |
| Id - Continuous Drain Current | 77 A | 77 A |
| Rds On - Drain-Source Resistance | 10.5 mOhms | 10.5 mOhms |
| Vgs - Gate-Source Voltage | 12 V | 12 V |
| Qg - Gate Charge | 23 nC | 23 nC |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
+ 175 C | + 175 C |
| Configuration | Single | Single |
| Pd-功率耗散 Pd - Power Dissipation |
88 W | 88 W |
| Channel Mode | Enhancement | Enhancement |
| 高度 Height |
4.4 mm | 15.65 mm |
| 长度 Length |
10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| 类型 Type |
Smps MOSFET | Smps MOSFET |
| 宽度 Width |
9.25 mm | 4.4 mm |
| Fall Time | 4.8 ns | 4.8 ns |
| Rise Time | 87 ns | 87 ns |
| 工厂包装数量 Factory Pack Quantity |
3200 | 3000 |
| Typical Turn-Off Delay Time | 17 ns | 17 ns |
| Typical Turn-On Delay Time | 6.8 ns | 6.8 ns |
| 单位重量 Unit Weight |
0.139332 oz | 0.211644 oz |
| 系列 Packaging |
Reel | Tube |
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