A Product Line of
Diodes Incorporated
FMMT634
100V NPN DARLINGTON TRANSISTOR IN SOT23
Features
BV
CEO
> 100V
I
C
= 900mA high Continuous Collector Current
I
CM
= 5A Peak Pulse Current
625mW Power dissipation
h
FE
> 5k up to 2A for high current gain hold up
Complementary PNP Type: FMMT734
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Applications
Lamp
Relay
Solenoid Driving
SOT23
C
E
B
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
FMMT634TA
Notes:
Compliance
AEC-Q101
Marking
634
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
634
624
634 = Product Type Marking Code
FMMT634
Document number: DS33115 Rev. 3 - 2
1 of 7
www.diodes.com
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT634
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
120
100
12
900
5
Unit
V
V
V
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
C/W
C/W
C/W
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
V
V
JEDEC Class
2
B
5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is measured at t
≤
5 sec.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT634
Document number: DS33115 Rev. 3 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT634
Thermal Characteristics and Derating information
10
V
CE(sat)
Limited
0.7
Max Power Dissipation (W)
I
C
Collector Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100m
10m
100µs
1m
100m
1
10
100
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
220
200
T =25°C
amb
180
160
140
120
D=0.5
100
80
D=0.1
60
D=0.2
40
D=0.05
20
Single Pulse
0
100µ 1m 10m 100m 1
10
100
Derating Curve
Single Pulse
T
amb
=25°C
Maximum Power (W)
100
1k
10
1
Pulse Width (s)
0.1
100µ
1m
10m 100m
Pulse Width (s)
1
10
100
1k
Transient Thermal Impedance
Pulse Power Dissipation
FMMT634
Document number: DS33115 Rev. 3 - 2
3 of 7
www.diodes.com
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT634
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
120
100
12
-
-
-
-
20k
15k
5k
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
170
115
16
<1
<1
<1
50k
60k
40k
14k
24k
600
0.67
0.72
0.75
0.82
0.68
0.85
1.5
1.33
140
9
290
2,400
Max
-
-
-
10
10
100
-
-
-
-
-
-
0.75
0.80
0.85
0.93
-
0.96
1.65
1.50
-
20
-
-
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 80V
V
EB
= 7V
V
CES
= 80V
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 1A, V
CE
= 2V
I
C
= 5A, V
CE
= 5V
I
C
= 100mA, I
B
= 1mA
I
C
= 250mA, I
B
= 1mA
I
C
= 500mA, I
B
= 5mA
I
C
= 900mA, I
B
= 5mA
I
C
= 900mA, I
B
= 5mA, T
J
=+150°C
I
C
= 1A, I
B
= 5mA
I
C
= 1A, I
B
= 5mA
I
C
= 1A, V
CE
= 5V
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 20V, I
C
= 500mA,
I
B1
= -I
B2
= 1mA
Static Forward Current Transfer Ratio (Note 9)
h
FE
-
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
V
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
Notes:
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(on)
t
(off)
V
V
MHz
pF
ns
ns
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
FMMT634
Document number: DS33115 Rev. 3 - 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT634
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FMMT634
Document number: DS33115 Rev. 3 - 2
5 of 7
www.diodes.com
March 2014
© Diodes Incorporated
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