IRFP32N50K, SiHFP32N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
190
59
84
Single
D
FEATURES
500
0.135
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R
DS(on)
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
N-Channel MOSFET
S
D
G
• High Speed Power Switching
• Hard Switching and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP32N50KPbF
SiHFP32N50K-E3
IRFP32N50K
SiHFP32N50K
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
500
± 30
32
20
130
3.7
450
32
46
460
13
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 0.87 mH, R
g
= 25
Ω,
I
AS
= 32 A.
c. I
SD
≤
32 A, dI/dt
≤
197 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.26
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
T
J
= 25 °C, I
F
= 32 A, dI/dt = 100 A/μs
b
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 32 A
b
V
DS
= 50 V, I
D
= 32 A
500
-
3.0
-
-
-
-
14
-
0.54
-
-
-
-
0.135
-
-
-
5.0
± 100
50
250
0.16
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
V
GS
= 10 V
I
D
= 32 A, V
DS
= 400 V
b
-
-
-
-
-
-
-
-
-
-
5280
550
45
5630
155
265
-
-
-
28
120
48
54
-
-
-
-
-
-
190
59
84
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 32 A,
Rg = 4.3
Ω,
V
GS
= 10 V
b
-
-
-
-
-
-
-
-
-
-
-
-
530
9.0
30
32
A
130
1.5
800
13.5
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 32 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width
≤
400 μs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
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2
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
Top
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
Bottom
100
TJ = 150 °C
10
10
1
TJ = 25 °C
1
0.1
5.0 V
20
μs
PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
4
5
7
8
VDS = 50 V
20
μs
PULSE WIDTH
9
11
12
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance (Normalized)
100
3.0
2.5
Top
ID, Drain-to-Source Current (A)
10
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
ID = 32 A
2.0
5.0 V
1.5
1
1.0
0.5
20
μs
PULSE WIDTH
TJ = 150 °C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.0
- 60 - 40 - 20 0
20 40
VGS = 10 V
60 80 100 120 140 160
TJ, Junction Temperature
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
100 000
VGS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
10 000
f = 1 MHz
SHORTED
1000
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
C, Capacitance (pF)
Ciss
1000
Coss
100
10
TJ = 25 °C
1
Crss
10
1
10
100
1000
0.1
0.2
VGS = 0 V
0.6
0.9
1.3
1.6
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 32 A
VDS = 400 V
VDS = 250 V
VDS = 100 V
1000
OPERATING IN THIS AREA LIMITED
BY RDS(on)
VGS, Gate-to-Source Voltage (V)
16
12
ID, Drain Current (A)
100
10
μs
8
100
μs
10
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
100
4
0
0
40
160
80
120
QG, Total Gate Charge (nC)
200
10 ms
1000
10000
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
V
DS
35
V
GS
30
25
ID, Drain Current (A)
R
G
R
D
D.U.T.
+
- V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
20
15
Fig. 10a - Switching Time Test Circuit
10
5
0
25
50
75
125
100
TC, Case Temperature (°C)
150
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (ZthJC)
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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