FEBRUARY 2012
AS7C38096A
1M X 8 BIT HIGH SPEED CMOS SRAM
FEATURES
Fast access time : 10ns
Very low power consumption:
Operating current:
80mA(TYP. 10ns)
Standby current (Normal version):
3mA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package: 44-pin 400 mil TSOP-II
48-ball 6mmx8mm TFBGA
GENERAL DESCRIPTION
The AS7C38096A is a 8M-bit high speed CMOS static
random access memory organized as 1,024K words by 8
bits. It is fabricated using very high performance, high
reliability CMOS technology. Its standby current is stable
within the range of operating temperature.
The AS7C38096A operates from a single power
supply of 3.3V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Product
Family
AS7C38096A
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
10ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc
1
,TYP.)
3mA
80/70mA
1
FEBRUARY 2012
AS7C38096A
1M X 8 BIT HIGH SPEED CMOS SRAM
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A19
DQ0 – DQ7
DECODER
1024Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
NC
A0-A19
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
2
FEBRUARY 2012
AS7C38096A
1M X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
44-pin TSOP(Type II)
48-ball 6mmx8mm TFBGA
A
B
C
D
E
F
G
H
NC
NC
DQ0
OE#
NC
NC
A0
A3
A5
A1
A4
A6
A7
A2
CE#
NC
NC
NC
DQ4
Vss DQ1 A17
Vcc DQ2
DQ3
NC
A18
NC
NC
A8
NC
A14
A12
A9
DQ5 Vcc
A16 DQ6 Vss
A15
NC
DQ7
NC
A19
A13 WE#
A10
A11
1
2
3
4
TFBGA
5
6
3
FEBRUARY 2012
AS7C38096A
1M X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
SYMBOL
V
T1
V
T2
T
A
T
STG
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
-40 to 85
-65 to 150
UNIT
V
V
℃
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for
extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
-10
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
Output Low Voltage
V
OH
V
OL
Icc
Average Operating
Power supply Current
Icc
1
Standby Power
Supply Current
Standby Power
Supply Current
Isb
I
SB1
I
OH
= -8mA
I
OL
=4mA
CE# = V
IL
, I
I/O
= 0mA
;f=max
-10
MIN.
2.7
2.2
- 0.3
-1
-1
2.4
-
-
TYP.
3.3
-
-
-
-
-
-
100
*4
MAX.
3.6
V
CC
+0.3
0.8
1
1
-
0.4
130
UNIT
V
V
V
µA
µA
V
V
mA
CE#
≧V
CC
- 0.2V, Other
pin is at 0.2V or Vcc-0.2V
-10
I
I/O
= 0mA;f=max
CE#
≧Vih
Other pin is at Vil or Vih
CE#
≧V
CC
- 0.2V;
Other pin is at 0.2V or Vcc-0.2V
80
110
40
mA
mA
mA
3
25
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4
FEBRUARY 2012
AS7C38096A
1M X 8 BIT HIGH SPEED CMOS SRAM
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
speed
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
10ns
0.2V to Vcc-0.2V
3ns
1.5V
C
L
= 30pF + 1TTL,
I
OH
/I
OL
= -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
AS7C38096A-10
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
MIN.
10
-
-
-
2
0
-
-
2
MAX.
-
10
10
4.5
-
-
4
4
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
AS7C38096A-10
MIN.
10
8
8
0
8
0
6
0
2
-
MAX.
-
-
-
-
-
-
-
-
-
4
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
5
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