MUN5115DW1,
NSBA114TDXV6,
NSBA114TDP6
Dual PNP Bias Resistor
Transistors
R1 = 10 kW, R2 =
8
kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
www.onsemi.com
PIN CONNECTIONS
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
5
Unit
Vdc
mAdc
Vdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
OE MG
G
SOT−563
CASE 463A
1
0E M
G
SOT−963
CASE 527AD
M
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
0E/T
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
ORDERING INFORMATION
Device
MUN5115DW1T1G,
SMUN5115DW1T1G
NSBA114TDXV6T1G
NSBA114TDXV6T5G
NSBA114TDP6T5G
Package
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2017
−
Rev. 1
1
Publication Order Number:
DTA114TD/D
T
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5115DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5115DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
Junction and Storage Temperature Range
NSBA114TDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 1)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBA114TDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBA114TDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
(Note 4)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBA114TDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
1.
2.
3.
4.
5.
(Note 4)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
FR−4 @ Minimum Pad.
FR−4 @ 1.0
×
1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
www.onsemi.com
2
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 10 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
160
−
−
−
−
4.9
7.0
−
250
−
0.6
1.4
−
−
10
−
−
0.25
−
−
0.2
−
13
−
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.9
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
3
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
MUN5115DW1, NSBA114TDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
75°C
h
FE
, DC CURRENT GAIN
75°C
0.1
−25°C
0.01
25°C
T
A
=
−25°C
100
25°C
I
C
/I
B
= 10
10
V
CE
= 10 V
1
0.001
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
10
C
ob
, OUTPUT CAPACITANCE (pF)
8
7
6
5
4
3
2
1
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
I
C
, COLLECTOR CURRENT (mA)
9
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
Figure 3. DC Current Gain
100
75°C
10
25°C
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
T
A
=
−25°C
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
T
A
=
−25°C
1
75°C
25°C
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
4
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
NSBA114TDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150°C
25°C
25°C
0.1
150°C
100
−55°C
10
V
CE
= 10 V
−55°C
0.01
0
10
20
30
40
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
7
C
ob
, OUTPUT CAPACITANCE (pF)
6
5
4
3
2
1
0
0
10
20
30
40
50
100
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
Figure 8. DC Current Gain
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
150°C
−55°C
25°C
V
O
= 5 V
0
1
2
3
4
5
6
7
8
0.001
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
100
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0
10
20
30
40
50
0.1
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
5
创意市集
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
