TB6674FG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TB6674FG
Stepping Motor Driver IC
TB6674FG is a stepping motor driver IC with MOS output
transistors.
The IC can control two-phase stepping motor forward and reverse by
bipolar driving. A power-saving circuit and a standby circuit are
included.
Features
One-chip two-phase bipolar stepping motor driver (including two
bridge drivers)
Power saving operation is available.
Standby operation is available.
Current consumption
≤
20
μA
(typ.)
HSOP16-P-300-1.00
Weight: 0.50 g (typ.)
Built-in punch-through current restriction circuit for system reliability and noise suppression.
TTL-compatible inputs IN A, IN B, PS, and V
S2B terminals
ON resistance PS = L : 2.9
Ω
(Typ.)
High driving ability.
: I
O (HOLD)
100 mA (MAX)
HSOP16 pin
: I
O (START)
350 mA (MAX) : V
S1
ENABLE
: V
S2
ENABLE
PS = H: 7.9
Ω
(Typ.)
Typical PKG
GND terminal = HEAT SINK
Over current shutdown circuit (ISD).
Thermal shutdown circuit (TSD).
Under voltage lockout circuit (UVLO).
Pull-down resistance for input terminal (250 kΩ).
© 2014 TOSHIBA Corporation
1
2014-10-06
TB6674FG
Block Diagram
V
S1
A
16
V
S2
A
1
V
CC
3
V
S2
B
8
V
S1
B
9
ΦA
15
14
ΦB
(A-ch)
Control logic and
Bridge driver
(B-ch)
Control logic and
Bridge driver
10
11
ΦA
IN A
4
5
ΦB
IN B
6
PS
Fin
GND
Note: TB6674FG: Terminals 2, 7, 12, and 13 are NC.
TB6674FG: The heat fin is connected to GND.
Pin Description
Pin No.
1
3
4
F
F
5
6
8
9
10
11
F
F
14
15
16
Symbol
V
S2A
V
CC
IN A
GND
GND
IN B
PS
V
S2B
V
S1B
ΦB
ΦB
GND
GND
ΦA
ΦA
V
S1A
Functional Description
Low-voltage power supply terminal
Power voltage supply terminal for control
A-ch forward rotation / reverse rotation signal input
terminal, Truth Table 1
GND terminal (Logic GND)
GND terminal (Logic GND)
B-ch forward rotation / reverse rotation signal input
terminal, Truth Table 1
Power saving signal input terminal
Standby signal input terminal, Truth Table 2
High-voltage power supply terminal
Output B
Output
B
GND terminal (Power GND)
GND terminal (Power GND)
Output
Α
Output A
High-voltage power supply terminal.
© 2014 TOSHIBA Corporation
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2014-10-06
TB6674FG
Truth Table 1.
Input
PS
L
L
H
H
IN
L
H
L
H
Φ
L
H
L
H
Φ
H
L
H
L
Output
Mode
ENABLE V
S1
ENABLE V
S1
ENABLE V
S2
(Power saving)
ENABLE V
S2
(Power saving)
Truth Table 2.
V
S2B
L
H
Mode
POWER OFF (Standby mode)
OPERATION
Note: Apply 5 V to V
S2A
as a supply terminal.
<Terminal circuit>
Input terminal
(IN A, IN B, PS, and V
S2B
)
Vcc
15 kΩ
250 kΩ
The diagram is partly-provided and omitted or simplified for explanatory purposes.
© 2014 TOSHIBA Corporation
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2014-10-06
TB6674FG
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
V
CC
Supply voltage
V
S1
V
S2
I
O (PEAK)
Output current
I
O (START)
I
O (HOLD)
Input voltage
Power dissipation
Operating
temperature
Storage temperature
V
IN
P
D
T
opr
T
stg
Rating
6.0
24.0
Up to V
CC
±400
±350
±100
Up to V
CC
0.9 (Note 1)
1.4 (Note 2)
－30
to 75
－55
to 150
V
W
°C
°C
mA
V
Unit
Note 1: IC only
Note 2: This value is obtained if mounting is on a 60 mm × 30 mm × 1.6 mm PCB, 50 % or more of which is occupied
by copper.
Operating Conditions
(Ta = 25°C)
Characteristic
Symbol
V
CC
Supply voltage
V
S1
V
S2A
Output current
Input voltage
Maximum frequency of input pulse
Minimum resolution of input pulse
I
O
V
IN
Min
4.5
8.0
2.7
－
0
－
20
Typ.
－
－
－
－
－
－
－
Max
5.5
22.0
5.5
±350
V
CC
25
－
mA
V
kHz
μs
V
Unit
f
IN
t
w
Value of ON resistance tends to increase when the difference between V
S1
and V
S2A
becomes 5 V or less.
© 2014 TOSHIBA Corporation
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2014-10-06
TB6674FG
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C, V
CC
= 5 V, V
S1
= 12 V,
and V
S2A
= 5 V)
Characteristic
Symbol
I
CC1
Supply current
I
CC2
I
CC3
High
Input voltage
Low
V
IN H
V
IN L
V
INhys
I
IN (H)
I
IN (L)
R
on 1H
Output ON resistance
R
on 2H
R
on L
Diode forward voltage
V
F U
V
F L
t
pLH
t
pHL
TSD
TSDhys
2
3
2
4
―
IN A, IN B, PS, V
S2B
1
Test
Cir−
cuit
Test Condition
PS: H, V
S2B
: H
PS: L, V
S2B
: H
V
S2B
: L
Min
―
―
―
2.0
- 0.2
―
IN A, IN B, PS, Vs2B
V
IN
= 5.0 V
Built in pull-down resistance.
V
IN
= 0 V
PS: L, V
S2B
: H
PS: H, V
S2B
: H
V
S2B
: H
I
F
= 350 mA, PS = L
IN
−
Φ
(Design target only)
(Design target only)
I
OUT
= 400 mA
I
OUT
= 100 mA
I
OUT
= 400 mA
5
―
―
―
―
―
―
―
―
―
―
Typ.
3
3
1
―
―
90
20
―
2
7
0.9
1.2
1.0
0.5
0.5
160
20
Max
5
5
20
Vcc
0.8
―
38
1
5
16
3.5
2.5
2.2
―
―
―
―
V
Ω
V
mV
μA
μA
Unit
mA
μA
Input hysteresis voltage*
1
Input current
1
Delay time
Thermal shutdown circuit*
TSD hysteresis *
―
―
―
μs
°C
°C
*:
Toshiba does not implement testing before shipping.
© 2014 TOSHIBA Corporation
5
2014-10-06
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