VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 65 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
Base cathode
2
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
3
2
1
1
Anode
3
Anode
TO-247AC
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Available
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
65 A
15 V
0.46 V
870 mA at 100 °C
125 °C
Single die
9 mJ
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-65PQ015... Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
65 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
65
15
1500
0.46
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 100 °C
T
J
= 125 °C
VS-65PQ015PbF
15
5
VS-65PQ015-N3
15
5
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 83 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 4.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
65
1500
400
9
2
mJ
A
A
UNITS
Revision: 17-Jul-13
Document Number: 94246
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
65 A
Forward
voltage
drop
V
FM (1)
130 A
65 A
130 A
T
J
= 125 °C
Reverse leakage current
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 100 °C
Threshold
voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum
voltage
rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package
body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
V
R
= Rated V
R
VALUES
0.50
0.71
0.46
0.76
1.2
18
870
0.137
4.9
4300
8
10 000
A
mA
mV
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 125
- 55 to 150
0.8
°C/W
0.3
6
0.21
Non-lubricated threads
Case style TO-247AC (JEDEC)
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
65PQ015
Revision: 17-Jul-13
Document Number: 94246
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
100
100
T
J
= 75 °C
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
J
J
10
T
J
= 50 °C
T
J
= 25 °C
1
1
0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
12
14
16
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
2
4
6
8
10
12
14
16
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Jul-13
Document Number: 94246
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
150
120
Average Power Loss (W)
DC
90
60
40
RMS limit
60
Square wave (D = 0.50)
5 V applied
20
DC
30
See note (1)
0
0
0
20
40
60
80
100
0
20
40
60
80
100
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 5 V
Revision: 17-Jul-13
Document Number: 94246
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
-
-
-
-
-
65
2
P
3
Q
4
015
5
PbF
6
1
2
3
4
5
6
Vishay Semiconductors product
Current rating (65 = 65 A)
Package:
P = TO-247
Schottky “Q” series
Voltage code (015 = 15 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-65PQ015PbF
VS-65PQ015-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC modified PbF
TO-247AC modified -N3
www.vishay.com/doc?95542
www.vishay.com/doc?95226
www.vishay.com/doc?95007
www.vishay.com/doc?95306
Revision: 17-Jul-13
Document Number: 94246
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
