®
BYT200PIV-400
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
FEATURES AND BENEFITS
n
n
n
n
2 x100 A
400 V
1.4 V
A1
A2
K1
K2
2
1
4
LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH AVALANCHE CAPABILITY
ISOLATED PACKAGE :
2500 V
DC
CAPACITANCE 42pF
DESCRIPTION
High current power rectifier diode suited for
Switched Mode Power Supply and high frequency
DC to DC converters.
Packaged in ISOTOP, this device is intended
for use in a medium voltage high current ap-
plications such as
welding equipment and
Telecom supplies.
ABSOLUTE MAXIMUM RATING
Symbol
b
O
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
T
stg
Tj
et
l
so
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
3
uc
d
1 = A1
2 = K1
3 = A2
4 = K2
s)
t(
ISOTOP
TM
Parameter
Value
400
150
Tc = 80°C
δ
= 0.5
tp = 10 ms
Sinusoidal
tp
®
10
µs
100
600
800
- 40 to + 150
150
Unit
V
A
A
A
A
°C
°C
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak forward current
Storage temperature range
Maximum junction temperature
ISOTOP is a trademark of STMicroelectronics
May 2000 - Ed: 3C
1/5
BYT200PIV-400
THERMAL RESISTANCES
Symbol
R
th (j-c)
R
th (c)
Junction to case
Parameter
Per leg
Total
Coupling
Value
0.55
0.33
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
I
R
*
V
F
**
Parameter
Reverse leakage current
Forward voltage drop
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 125°C
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2%
Min.
Typ.
4
Max.
120
12
V
R
= V
RRM
I
F
= 100 A
I
F
= 100 A
RECOVERY CHARACTERISTICS
Symbol
t
rr
Parameter
Reverse recovery time
Test Conditions
I
RM
S factor
t
fr
Reverse recovery current
Softness factor
V
FP
b
O
et
l
so
Forward recovery time
Peak forward voltage
od
r
P
e
uc
s)
t(
I
F
=0.5A I
R
=1A Irr=0.25A
I
F
=1A dI/dt= -50A/µs
Vr=30V
dI
F
/dt=-200A/µs
V
R
=400V
dI
F
/dt=-200A/µs
V
R
=400V
Tj=125°C
I
F
=100A
Tj=125°C
I
F
=100A
O
-
so
b
te
le
r
P
0.95
d
o
55
uc
1.6
1.4
s)
t(
µA
V
Unit
mA
Min.
Typ.
Max.
100
40
Unit
ns
A
0.25
500
12
ns
V
I
F
=100A
dI
F
/dt=500A/µs
Measured at 1.1 x V
F
max.
Tj=25°C
To evaluate the conduction losses use the following equation :
P = 0.8 x I
F(AV)
+ 0.00228 x I
F2(RMS)
2/5
BYT200PIV-400
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
Fig. 2:
Peak current versus form factor (per diode).
PF(av)(W)
140
120
100
80
60
40
20
0
0
100
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
=1
IM(A)
500
δ
= 0.5
400
300
200
P=100W
P=75W
P=125W
P=150W
IF(av) (A)
10 20 30 40 50 60 70 80 90 100 110 120 130
0
0.0
0.1
0.2
0.3
0.4
δ
0.5
0.6
Fig. 3:
Average forward current versus ambient
temperature (δ = 0.5, per diode).
Fig. 4:
Non repetitive surge peak forward current
versus overload duration (per diode).
IF(av)(A)
120
Rth(j-a)=Rth(j-c)
700
100
80
60
40
20
0
0
25
Rth(j-a)=2°C/W
bs
O
1.0
δ
= 0.5
Fig. 5:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
et
l
o
ro
P
e
50
75
Tamb(°C)
uc
d
100
s)
t(
125
O
-
150
600
500
400
300
200
100
so
b
IM(A)
te
le
r
P
d
o
uc
0.7
s)
t(
0.8
0.9
1.0
Tc=50°C
Tc=75°C
Tc=100°C
t(s)
1E-2
1E-1
1E+0
0
1E-3
Fig. 6:
Forward voltage drop versus forward current
(maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
IFM(A)
500
100
0.5
δ
= 0.2
Tj=125°C
Tj=25°C
δ
= 0.1
0.2
Single pulse
10
tp(s)
1E-2
1E-1
1E+0
VFM(V)
1
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0.1
1E-3
3/5
BYT200PIV-400
Fig. 7:
Junction capacitance versus reverse voltage
applied (typical values, per diode).
Fig. 8:
Recovery charges versus dIF/dt (per diode).
C(pF)
500
450
400
350
300
250
200
150
100
1
VR(V)
10
100
200
F=1MHz
Tj=25°C
Qrr(µC)
3.0
2.5
2.0
1.5
1.0
0.5
dIF/dt(A/µs)
0.0
0
100
200
300
IF=IF(av)
90% confidence
Tj=125°C
Fig. 9:
Recovery current versus dIF/dt (per diode).
Fig. 10:
Transient peak forward voltage versus
dIF/dt (per diode).
IRM(A)
50
45
40
35
30
25
20
15
10
5
0
IF=IF(av)
90% confidence
Tj=125°C
0
bs
O
1.25
1.00
0.75
0.50
Fig. 11:
Dynamic parameters versus junction
temperature.
et
l
o
100
r
P
e
200
dIF/dt(A/µs)
od
300
uc
s)
t(
O
-
14
12
10
so
b
VFP(V)
te
le
r
P
d
o
uc
400
s)
t(
500
IF=IF(av)
90% confidence
Tj=125°C
8
6
4
2
dIF/dt(A/µs)
0
100
200
300
400
500
600
700
800
400
500
0
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
IRM
Qrr
0.25
Tj(°C)
0.00
0
25
50
75
100
125
150
4/5
BYT200PIV-400
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
REF.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Millimeters
Min.
Max.
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Inches
Min.
Max.
0.465
0.480
0.350
0.358
0.307
0.323
0.030
0.033
0.077
0.081
1.488
1.504
1.240
1.248
0.990
1.004
0.939
0.951
0.976 typ.
0.587
0.594
0.496
0.504
0.138
0.169
0.161
0.169
0.181
0.197
0.157
0.69
0.157
0.173
1.185
1.193
n
Epoxy meets UL94, V0
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
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