d. Maximum under steady state conditions is 90 °C/W.
Document Number: 73324
S11-0209-Rev. D, 14-Feb-11
www.vishay.com
1
Symbol
R
thJA
R
thJF
Typical
36
22
Maximum
50
28
Unit
°C/W
Si4684DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 5 mA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 9.5 A
V
DS
= 15 V, I
D
= 16 A
Min.
30
Typ.
Max.
Unit
V
30
4.5
0.6
1.1
± 100
1
10
30
0.0078
0.0092
45
2080
0.0094
0.0115
1.5
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 11 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 11 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.87
Ω
I
D
≅
8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
0.2
340
135
30
14
3
2.8
0.55
15
60
28
9
12
0.9
25
100
45
15
20
20
70
18
4
50
0.70
30
26
16
14
1.1
45
40
45
21
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 1.87
Ω
I
D
≅
8 A, V
GEN
= 10 V, R
g
= 1
Ω
12
45
11
T
C
= 25 °C
I
S
= 2.3 A
A
V
ns
nC
ns
I
F
= 9.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73324
S11-0209-Rev. D, 14-Feb-11
Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 3 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.2
1.0
0.8
30
0.6
20
2V
0.4
T
C
= 125 °C
10
0.2
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.012
2500
Transfer Characteristics
R
DS(on)
- On-Resistance (m )
0.011
C - Capacitance (pF)
C
iss
2000
V
GS
= 4.5 V
0.010
1500
0.009
V
GS
= 10 V
0.008
1000
0.007
500
C
rss
0
0
5
10
15
20
25
30
35
40
0
5
10
C
oss
0.006
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 11 A
8
R
DS(on)
- On-Resistance
1.8
I
D
= 12 A
1.6
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 10 V
1.4
(Normalized)
V
GS
= 4.5 V
6
V
DS
= 10 V
4
V
DS
= 15 V
2
V
DS
= 20 V
1.2
1.0
0.8
0
0
4
8
12
16
20
24
28
32
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73324
S11-0209-Rev. D, 14-Feb-11
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
10
T
J
= 150
°C
I
S
- Source Current (A)
0.05
I
D
= 12 A
0.04
1
0.03
0.1
T
J
= 25
°C
0.01
0.02
T
J
= 125 °C
0.01
T
J
= 25 °C
0.00
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
0.0
I
D
= 5 mA
Power (W)
120
- 0.2
80
- 0.4
I
D
= 250
µA
- 0.6
- 50
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25
°C
Single Pulse
0.01
0.1
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73324
S11-0209-Rev. D, 14-Feb-11
Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
100
16
I
D
- Drain Current (A)
I
C
- Peak Avalanche Current (A)
10
12
8
Package Limited
1
L · I
D
BV - V
DD
4
T
A
=
0.1
0
0
25
50
75
100
125
150
0.00001
0.0001
0.001
0.01
0.1
1
T
C
- Case Temperature (°C)
T
A
- Time In Avalanche (s)
Current Derating*
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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