SBA5089Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-89

Product Description

RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

Gain & Return Loss

30

20

10

0

-10

-20

S11

S22

S21

Features



IP3=34.0dBm at 1950MHz

P

OUT

=13.0dBm at -45dBc

ACP IS-95 1950MHz

Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

Applications





GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

-40

0

1

2

3

Frequency (GHz)

4

5

6

IF Amplifier

Wireless Data, Satellite

Terminals

-30

Parameter

Small Signal Gain

Min.

18.5

16.5

Specification

Typ.

Max.

Unit

Condition

20.0

21.5

dB

850MHz

18.0

19.5

dB

1950MHz

Output Power at 1dB Compression

19.7

dBm

850MHz

18.0

19.5

dBm

1950MHz

Output Third Order Intercept Point

36.0

dBm

850MHz

32.0

34.0

dBm

1950MHz

Output Power

13.0

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Bandwidth

4400

MHz

Return Loss >10dB

Input Return Loss

14.0

20.0

dB

1950MHz

Output Return Loss

9.0

11.0

dB

1950MHz

Noise Figure

4.5

5.5

dB

1950MHz

Device Operating Voltage

4.7

4.9

5.3

V

Device Operating Current

72

80

88

mA

Thermal Resistance (junction to lead)

70

°C/W

Test Conditions: V

S

=8V, I

D

=80mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

L

=25°C, Z

S

=Z

L

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS111204

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SBA5089Z

Absolute Maximum Ratings

Parameter

Device Current (I

D

)

Device Voltage (V

D

)

RF Input Power

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

Operating Dissipated Power

Rating

130

6

+17

+150

-40 to +85

+150

0.65

Unit

mA

V

dBm

°C

W

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Moisture Sensitivity Level

MSL 2

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical Performance at Key Operating Frequencies

Parameter

Small Signal Gain

Output Third Order Intercept

Point

Output Power at 1dB

Compression

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

Unit

dB

dBm

dB

100MHz

20.5

36.3

19.8

29

27

22

4.1

500MHz

20.2

35.8

19.8

27

21

22

4.3

850MHz

19.9

36.0

19.7

25

17

23

4.2

1950MHz

18.0

34.0

19.5

20

11

23

4.5

2400MHz

17.1

32.7

18.8

17

11

23

-

3500MHz

15.3

30.9

17.1

11.8

11

23

-

Test Conditions: V

S

=8V, I

D

=80mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

L

=25°C, Z

S

=Z

L

=50

Test Conditions:

Noise Figure vs. Frequency

O

3

vs. Frequency

IP

38

36

OIP

3

(dBm)

+25c

-40c

+85c

6

Noise Figure (dB)

5

4

3

2

0

0.5

1

1.5

Frequency (GHz)

21

20

P

1dB

(dBm)

19

18

17

16

15

0

0.5

1

1.5

2

2.5

+25c

-40c

+85c

34

32

30

28

26

2

P1dB vs. Frequency

+25c

-40c

+85c

0

0.5

1

1.5

2

2.5

3

3.5

Frequency (G z)

H

3

3.5

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111204

SBA5089Z

|S

11

| vs. Frequency

0

25

Preliminary

Advanced Data Sheet

|S

21

| vs. Frequency

20

-10

s11 (dB)

s21 (dB)

+25c

15

-20

10

+25c

-30

-40c

+85c

5

-40c

+85c

-40

0

1

2

3

Frequency (GHz)

4

5

6

0

1

2

3

4

5

6

Frequency (GHz)

|S

12

| vs. Frequency

-10

|S

22

| vs. Frequency

0

+25c

-40c

+85c

-15

-10

s22 (dB)

s12 (dB)

-20

-25

-30

+25c

-40c

+85c

-30

0

1

2

3

Frequency (GHz)

4

5

6

-40

0

1

2

3

Frequency (GHz)

4

5

6

IS-95 @850M

Hz

Adj. Channel Pwr. vs. Channel output Pwr.

-30

-35

-40

-45

-50

-55

-60

-65

-70

6

8

10

12

dBm

14

-30

-35

-40

-45

-50

-55

-60

-65

-70

6

IS-95 @ 1950MHz

Adj. Channel Pwr. vs. Channel Output Power

dBc

+25c

-40c

+85c

+25c

-40c

+85c

16

8

10

12

dBm

14

16

DS111204

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SBA5089Z

Basic Application Circuit

V

S

R

BIAS

1 uF

1000

pF

C

D

L

C

RF in

C

B

1

SBA-5089

3

2

C

B

4

RF out

Evaluation Board Layout

V

S

R

BIAS

1 uF

1000 pF

BA5

C

B

L

C

D

C

B

Mounting Instructions:

1. Solder the copper pad on the backside of the device package to the ground plane.

2.. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.

3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1

ounce copper on both sides.

Application Circuit Element Values

Reference Designator

C

B

C

D

L

C

500MHz

220pF

100pF

68nH

850MHz

100pF

68pF

33nH

1950MHz

68pF

22pF

22nH

2400MHz

56pF

22pF

18nH

3500MHz

39pF

15pF

15nH

Recommended Bias Resistor Values for I

D

=80mA, R

BIAS

=(V

S

-V

D

) /I

D

Supply Voltage (V

S

)

R

BIAS

7.5V

33

8V

39

10V

68

12V

91

Note: R

BIAS

provides DC bias stability over temperature.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111204

SBA5089Z

1

2, 4

3

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera-

tion.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as

possible.

RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for

proper operation.

PCB Pad Layout

Dimensions in inches [millimeters]

DS111204

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Qorvo
产品种类 Product Category	RF Amplifier
RoHS	Details
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	SOT-89-3
类型 Type	Cellular
技术 Technology	GaAs InGaP
Operating Frequency	DC to 5 GHz
P1dB - Compression Point	19.5 dBm
Gain	18 dB
工作电源电压 Operating Supply Voltage	4.9 V
NF - Noise Figure	4.5 dB
测试频率 Test Frequency	1.95 GHz
OIP3 - Third Order Intercept	34 dBm
工作电源电流 Operating Supply Current	80 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
Number of Channels	1 Channel
Input Return Loss	20 dB
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	1000

SBA5089Z

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SBA5089Z概述

SBA5089Z规格参数

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