NSIC2050BT3G
Constant Current Regulator
& LED Driver for A/C off-line
Applications
120 V, 50 mA
+
15%, 3 W Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self−Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator.
The 120 V anode−cathode voltage rating is designed to withstand
the high peak voltage incurred in A/C offline applications. The high
anode−cathode voltage also protects surges common in Industrial and
Commercial Signage applications. The CCR comes in thermally
robust packages and is UL94−V0 Certified.
Features
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I
reg(SS)
= 50 mA
@ Vak = 7.5 V
Anode 2
Cathode 1
1
2
SMB
CASE 403A
•
•
•
•
•
•
•
•
Robust Power Package: 2.3 W
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing
−
Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Also available in 30 mA (NSIC2030BT1G) and 20 mA
(NSIC2020BT1G)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING DIAGRAM
AYWW
2050G
G
1
2
2050
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
•
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
•
•
•
•
•
•
Lettering
Application Note AND8433/D – A/C Application
Application Note AND8492/D – A/C Capacitive Drop Design
Design Note DN05013 – A/C Design
Design Note DN06065 – A/C Design with PFC
Application Notes AND8391/D, AND9008/D
−
Power Dissipation
Considerations
Automotive Applications
−
Consult Factory
ORDERING INFORMATION
Device
NSIC2050BT3G
Package
SMB
(Pb−Free)
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
January, 2014
−
Rev. 1
1
Publication Order Number:
NSIC2050B/D
NSIC2050BT3G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating Junction and Storage Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Vak Max
V
R
T
J
, T
stg
ESD
Value
120
500
−55
to +175
Class 3A (4000 V)
Class C (400 V)
Unit
V
mV
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Symbol
I
reg(SS)
V
overhead
I
reg(P)
48.1
Min
42.5
Typ
50
1.8
57.4
66.7
Max
57.5
Unit
mA
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration
≥
80 sec, using 100 mm
2
, 1 oz. Cu (or equivalent), in still air.
2. V
overhead
= V
in
−
V
LEDs
. V
overhead
is typical value for 80% I
reg(SS)
.
3. I
reg(P)
non−repetitive pulse test. Pulse width t
≤
360
msec.
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2
NSIC2050BT3G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Reference, Junction−to−Tab (Note 1)
Total Device Dissipation (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Tab (Note 2)
Total Device Dissipation (Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 3)
Thermal Reference, Junction−to−Tab (Note 3)
Total Device Dissipation (Note 4) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Reference, Junction−to−Tab (Note 4)
Total Device Dissipation (Note 5) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Tab (Note 5)
Total Device Dissipation (Note 6) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Tab (Note 6)
Total Device Dissipation (Note 7) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Tab (Note 7)
Total Device Dissipation (Note 8) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Tab (Note 8)
Total Device Dissipation (Note 9) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Tab (Note 9)
Total Device Dissipation (Note 10) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Tab (Note 10)
Total Device Dissipation (Note 11) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Thermal Reference, Junction−to−Tab (Note 11)
Symbol
P
D
R
θ
JA
R
ψ
JL
P
D
Max
1210
8.0
124
17.5
1282
8.5
117
18.2
1667
11.1
90
16.4
1765
11.8
85
16.7
1948
13
77
15.5
2055
12.7
73
15.6
2149
14.3
69.8
14.8
2269
15.1
66.1
14.8
2609
17.4
57.5
13.9
2500
16.7
60
16
3000
20
50
16
Unit
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
P
D
R
θ
JA
R
ψ
JL
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher
°C/W
values based upon empirical
measurements and method of attachment.
1. 100 mm
2
, 1 oz. Cu, still air.
2. 100 mm
2
, 2 oz. Cu, still air.
3. 300 mm
2
, 1 oz. Cu, still air.
4. 300 mm
2
, 2 oz. Cu, still air.
5. 500 mm
2
, 1 oz. Cu, still air.
6. 500 mm
2
, 2 oz. Cu, still air.
7. 700 mm
2
, 1 oz. Cu, still air.
8. 700 mm
2
, 2 oz. Cu, still air.
9. 1000 mm
2
, 3 oz. Cu, still air.
10. 400 mm
2
, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
11. 900 mm
2
, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
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3
NSIC2050BT3G
(Minimum FR−4 @ 100 mm
2
, 1 oz. Copper Trace, Still Air)
I
reg(SS)
, STEADY STATE CURRENT (mA)
70
I
reg
, CURRENT REGULATION (mA)
60
50
40
30
20
10
0
−10
−20
−20
0
20
40
60
80
100
T
A
= 25°C
120
140
Vak, ANODE−CATHODE VOLTAGE (V)
70
60
50
40
30
20
10
0
DC Test Steady State, Still Air
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
T
A
=
−55°C
T
A
= 25°C
T
A
= 85°C
≈
−0.130
mA/°C
≈
−0.130
mA/°C
T
A
= 125°C
≈
−0.224
mA/°C
TYPICAL PERFORMANCE CURVES
T
J(max)
, maximum die temperature
limit 175°C (100 mm
2
, 1 oz Cu)
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 1. General Performance Curve for CCR
I
reg(SS)
, STEADY STATE CURRENT (mA)
65
I
reg(P)
, PULSE CURRENT (mA)
60
55
50
45
40
35
30
25
1
2
3
4
5
6
7
Non−Repetitive Pulse Test
8
9
10 11 12 13 14 15
Vak, ANODE−CATHODE VOLTAGE (V)
T
A
= 25°C
58
56
54
52
50
48
46
44
42
48
Figure 2. Steady State Current (I
reg(SS)
) vs.
Anode−Cathode Voltage (Vak)
Vak @ 7.5 V
T
A
= 25°C
50
52
54
56
58
60
62
64
66
68
I
reg(P)
, PULSE CURRENT (mA)
Figure 3. Pulse Current (I
reg(P)
) vs.
Anode−Cathode Voltage (Vak)
58
I
reg
, CURRENT REGULATION (mA)
P
D
, POWER DISSIPATION (mW)
57
56
55
54
53
52
51
50
49
0
10
20
30
40
TIME (s)
50
60
70
80
Vak @ 7.5 V
T
A
= 25°C
3000
2500
2000
1500
1000
500
0
−40
Figure 4. Steady State Current vs. Pulse
Current Testing
500 mm
2
/2 oz
500 mm
2
/1 oz
FR−4 Board
300 mm
2
/2 oz
300 mm
2
/1 oz
100 mm
2
/2 oz
100 mm
2
/1 oz
−20
0
20
40
60
80
100
120
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Current Regulation vs. Time
Figure 6. Power Dissipation vs. Ambient
Temperature @ T
J
= 1755C: Small Footprint
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4
NSIC2050BT3G
(Minimum FR−4 @ 100 mm
2
, 1 oz. Copper Trace, Still Air)
4500
4000
POWER DISSIPATION (mW)
3500
3000
2500
2000
1500
1000
500
0
−40
−20
0
20
40
60
80
100
120
FR−4, 700 mm
2
/2 oz
FR−4, 700 mm
2
/1 oz
TYPICAL PERFORMANCE CURVES
DENKA K1, 900 mm
2
/2 oz
FR−4, 1000 mm
2
/3 oz
DENKA K1, 400 mm
2
/2 oz
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7. Power Dissipation vs. Ambient
Temperature @ T
J
= 1755C: Large Footprint
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