Si4420DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
13.5
11
r
DS(on)
(W)
0.009 @ V
GS
= 10 V
0.013 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4420DY
Si4420DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 sec
30
Steady State
Unit
V
"20
13.5
10.8
50
2.7
3.0
1.9
−55
to 150
1.36
1.5
0.95
9.5
7.5
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
t
10 sec
Maximum
M i
J
Junction-to-Ambient
a
ti t A bi t
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
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Si4420DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=13.5 A
V
GS
= 4.5 V, I
D
= 11 A
V
DS
= 15 V, I
D
= 13.5 A
I
S
= 2.3 A, V
GS
= 0 V
30
0.0075
0.010
50
1.1
0.009
0.013
1.0
2.0
3.0
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.5
V
DS
= 15 V, V
GS
= 10 V, I
D
= 13.5 A
,
,
V
DS
= 15 V, V
GS
= 5 V, I
D
= 13.5 A
29
58
12
9.5
2.1
22
13
82
30
50
4.6
35
20
125
45
75
ns
W
45
90
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 4 V
40
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
40
50
Transfer Characteristics
30
30
20
20
T
C
= 125_C
10
25_C
−55_C
10
3V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
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0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
2
Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
r
DS(on)
−
On-Resistance (
W
)
5000
Capacitance
0.018
V
GS
= 4.5 V
C
−
Capacitance (pF)
0.024
4000
C
iss
3000
0.012
2000
C
oss
0.006
V
GS
= 10 V
1000
C
rss
0.000
0
10
20
30
40
50
0
0
4
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 13.5 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 13.5 A
1.4
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
20
30
40
50
60
1.2
4
1.0
2
0.8
0
0
10
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.05
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
−
On-Resistance (
W
)
0.04
I
D
= 13.5 A
0.03
I
S
−
Source Current (A)
T
J
= 150_C
10
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
www.vishay.com
3
Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
40
Power (W)
120
200
Single Pulse Power, Junction-to-Ambient
160
80
−25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
−
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71818
S-31990—Rev. F, 13-Oct-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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