MCP6031/2/3/4
0.9 µA, High-Precision Op Amps
Features
•
•
•
•
•
•
•
•
Rail-to-Rail Input and Output
Low Offset Voltage:
150 µV (maximum)
Ultra-Low Quiescent Current: 0.9 µA (typical)
Wide Power Supply Voltage: 1.8V to 5.5V
Gain Bandwidth Product: 10 kHz (typical)
Unity Gain Stable
Chip Select (CS) capability: MCP6033
Extended Temperature Range:
- -40°C to +125°C
• No Phase Reversal
Description
The Microchip Technology Inc. MCP6031/2/3/4 family
of operational amplifiers (op amps) operates with a
single-supply voltage as low as 1.8V, while drawing
ultra-low quiescent current per amplifier (0.9 µA,
typical). This family also has low input offset voltage
(
150 µV, maximum) and rail-to-rail input and output
operation. This combination of features supports
battery-powered and portable applications.
The MCP6031/2/3/4 family is unity gain stable and has
a gain bandwidth product of 10 kHz (typical). These
specifications make these op amps appropriate for
low-frequency applications, such as battery current
monitoring and sensor conditioning.
The MCP6031/2/3/4 family is offered in single
(MCP6031), single with power-saving Chip Select (CS)
input (MCP6033), dual (MCP6032) and quad
(MCP6034) configurations.
The MCP6031/2/3/4 family is designed with Microchip’s
advanced CMOS process. All devices are available in
the extended temperature range, with a power supply
range of 1.8V to 5.5V.
Applications
•
•
•
•
•
Toll Booth Tags
Wearable Products
Battery Current Monitoring
Sensor Conditioning
Battery Powered
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer and Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6031
DFN, SOIC, MSOP
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
–
+
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6033
DFN, SOIC, MSOP
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
–
+
8 CS
7 V
DD
6 V
OUT
5 NC
Typical Application
I
DD
1.4V
to
5.5V
10
100 k
+
V
DD
V
OUT
MCP6031
SOT-23
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
+
–
4 V
IN
-
MCP6034
SOIC, TSSOP
V
OUTA
1
–
+
–
+
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
–
+
–
+
V
INA
- 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
MCP6031
–
1 M
V
DD
–
V
OUT
I
DD
= -----------------------------------------
-
10 V/V
10
High-Side Battery Current Sensor
MCP6032
SOIC, MSOP
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
SS
4
–
+
V
INB
- 6
V
DD
V
8
OUTB
7
7 V
OUTB
6 V
INB
-
5 V
INB
+
–
+
2007-2019 Microchip Technology Inc.
DS20002041C-page 1
MCP6031/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
††
See
Section 4.1.2 “Input Voltage and Current
Limits”.
Absolute Maximum Ratings†
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+, V
IN
-)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection on All Pins (HBM; MM)
4 kV; 400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 Mto V
L
and CS is tied low. (Refer to
Figure 1-2
and
Figure 1-3.)
Parameters
Input Offset
Input Offset Voltage
V
OS
-150
—
70
—
—
—
—
—
—
V
SS
–0.3
70
72
70
72
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
A
OL
95
115
—
dB
0.2V < V
OUT
< (V
DD
– 0.2V),
R
L
= 50 k to V
L
—
±3.0
88
±1.0
60
2000
±1.0
10
13
||6
10
13
||6
—
95
93
89
93
+150
—
—
100
—
5000
—
—
—
V
DD
+ 0.3
—
—
—
—
µV
V
DD
= 3.0V, V
CM
= V
DD
/3
Input Offset Drift with Temperature
V
OS
/T
A
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
I
B
I
B
Input Offset Current
Common-mode Input Impedance
Differential Input Impedance
Common-mode
Common-mode Input Voltage
Range
Common-mode Rejection Ratio
V
CMR
CMRR
V
dB
dB
dB
dB
V
CM
= -0.3V to 2.1V,
V
DD
= 1.8V
V
CM
= -0.3V to 5.8V,
V
DD
= 5.5V
V
CM
= 2.75V to 5.8V,
V
DD
= 5.5V
V
CM
= -0.3V to 2.75V,
V
DD
= 5.5V
I
OS
Z
CM
Z
DIFF
pA
pA
pA
pA
||pF
||pF
T
A
= +85°C
T
A
= +125°C
PSRR
µV/°C T
A
= -40°C to +125°C,
V
DD
= 3.0V, V
CM
= V
DD
/3
dB
V
CM
= V
SS
Sym
Min
Typ
Max
Units
Conditions
DS20002041C-page 2
2007-2019 Microchip Technology Inc.
MCP6031/2/3/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 Mto V
L
and CS is tied low. (Refer to
Figure 1-2
and
Figure 1-3.)
Parameters
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
1.8
0.4
—
0.9
5.5
1.35
V
µA
I
O
= 0, V
CM
= V
DD,
V
DD
= 5.5V
V
OL
, V
OH
V
SS
+ 10
I
SC
—
—
—
±5
±23
V
DD
– 10
—
—
mV
mA
mA
R
L
= 50 k to V
L
,
0.5V input overdrive
V
DD
= 1.8V
V
DD
= 5.5V
Sym
Min
Typ
Max
Units
Conditions
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated: T
A
= +25°C, V
DD
= +1.8 to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, C
L
= 60 pF, R
L
= 1 Mto V
L
and CS is tied low. (Refer to
Figure 1-2
and
Figure 1-3.)
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
3.9
165
0.6
—
—
—
µVp-p
nV/Hz
fA/Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
10
65
4.0
—
—
—
kHz
°
V/ms
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
2007-2019 Microchip Technology Inc.
DS20002041C-page 3
MCP6031/2/3/4
MCP6033 CHIP SELECT ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
=GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, C
L
= 60 pF, R
L
= 1 Mto V
L
and CS is tied low (Refer to
Figure 1-1).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output
Turn-on Time
CS High to Amplifier Output
High-Z
CS Hysteresis
t
ON
—
4
100
ms
CS
0.2 V
DD
to V
OUT
= 0.9 V
DD
/2,
G = +1 V/V, V
IN
= V
DD
/2,
R
L
= 50 kto V
L
= V
SS
CS
0.8 V
DD
to V
OUT
= 0.1 V
DD
/2,
G = +1 V/V, V
IN
= V
DD
/2,
R
L
= 50 kto V
L
= V
SS
V
IH
I
CSH
I
SS
I
O(LEAK)
0.8 V
DD
—
—
—
—
10
-400
10
V
DD
—
—
—
V
pA
pA
pA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
—
—
-10
0.2 V
DD
—
V
pA
CS = V
SS
Sym
Min
Typ
Max
Units
Conditions
t
OFF
—
10
—
µs
V
HYST
—
0.3 V
DD
—
V
CS
t
ON
V
OUT
High-Z
V
IL
V
IH
t
OFF
High-Z
-0.9 µA
(typical)
I
SS
-400 pA
(typical)
I
CS
10 pA
(typical)
-400 pA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6033.
DS20002041C-page 4
2007-2019 Microchip Technology Inc.
MCP6031/2/3/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5-Lead SOT-23
Thermal Resistance, 8-Lead DFN
Thermal Resistance, 8-Lead SOIC
Thermal Resistance, 8-Lead MSOP
Thermal Resistance, 14-Lead SOIC
Thermal Resistance, 14-Lead TSSOP
Note 1:
JA
JA
JA
JA
JA
JA
—
—
—
—
—
—
256
84
163
206
120
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
1.1
Test Circuits
V
DD
V
DD
/2
V
DD
R
N
2.2 µF
R
N
+
0.1 µF
V
OUT
C
L
V
L
R
F
R
L
V
IN
R
G
R
F
2.2 µF
+
0.1 µF
V
OUT
C
L
V
L
R
L
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.6 “Supply Bypass”.
MCP603X
–
V
IN
MCP603X
–
V
DD
/2
R
G
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
FIGURE 1-2:
AC and DC Test Circuit for
Most Noninverting Gain Conditions.
2007-2019 Microchip Technology Inc.
DS20002041C-page 5
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