CAT28C64BG12: 产品描述EEPROM (8kx8) 64K 5V 120ns; 产品类别存储存储; 文件大小72KB，共13页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn; 标准

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CAT28C64BG12在线购买

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CAT28C64BG12概述

EEPROM (8kx8) 64K 5V 120ns

CAT28C64BG12规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	ON Semiconductor(安森美)
零件包装代码	QFJ
包装说明	LEAD FREE AND HALOGEN FREE, PLASTIC, LCC-32
针数	32
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	120 ns
命令用户界面	NO
数据轮询	YES
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PQCC-J32
JESD-609代码	e3
长度	13.965 mm
内存密度	65536 bit
内存集成电路类型	EEPROM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	32
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8KX8
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC32,.5X.6
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
页面大小	32 words
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
编程电压	5 V
认证状态	Not Qualified
座面最大高度	3.55 mm
最大待机电流	0.0001 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin (Sn)
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
切换位	YES
宽度	11.425 mm
最长写入周期时间 (tWC)	5 ms

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CAT28C64B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast read access times:

Commercial, industrial and automotive

– 90/120/150ns

Low power CMOS dissipation:

temperature ranges

Automatic page write operation:

– Active: 25 mA max.

– Standby: 100

A max.

Simple write operation:

– 1 to 32 bytes in 5ms

– Page load timer

End of write detection:

– On-chip address and data latches

– Self-timed write cycle with auto-clear

Fast write cycle time:

– Toggle bit

–

DATA

polling

100,000 program/erase cycles

100 year data retention

– 5ms max.

CMOS and TTL compatible I/O

Hardware and software write protection

DESCRIPTION

The CAT28C64B is a fast, low power, 5V-only CMOS

Parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C64B features hardware and software write

protection.

The CAT28C64B is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC-

approved 28-pin DIP, TSOP, SOIC, or, 32-pin PLCC

package .

BLOCK DIAGRAM

A5–A12

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

8,192 x 8

EEPROM

ARRAY

32 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

LOGIC

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

I/O0–I/O7

A0–A4

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1011, Rev. I

CAT28C64BG12相似产品对比

	CAT28C64BG12	CAT28C64BN-12	CAT5113VI-00-T3	CAT28C64BH13-90T	CAT28C64BGI12	231290511628	CAT28C64BG-12T	CAT28C64BPI-12	CAT28C64BGI-12T
描述	EEPROM (8kx8) 64K 5V 120ns	EEPROM (8kx8) 64K 5V	Digital Potentiometer ICs DPP,NV 100 taps Up/Down	EEPROM 64K-Bit CMOS PARA EEPROM	EEPROM (8kx8) 64K 5V 120ns	RESISTOR, THIN FILM, 0.4 W, 1 %, 50 ppm, 1.62 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT	EEPROM 64K-Bit CMOS PARA EEPROM	EEPROM (8kx8) 64K 5V	EEPROM 64K-Bit CMOS PARA EEPROM
是否Rohs认证	符合	不符合	-	符合	符合	符合	符合	不符合	符合
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	-	ON Semiconductor(安森美)	ON Semiconductor(安森美)	-	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
零件包装代码	QFJ	QFJ	-	TSOP	QFJ	-	QFJ	DIP	QFJ
包装说明	LEAD FREE AND HALOGEN FREE, PLASTIC, LCC-32	PLASTIC, LCC-32	-	8 X 13.40 MM, LEAD FREE AND HALOGEN FREE, TSOP-28	QCCJ, LDCC32,.5X.6	,	LEAD FREE AND HALOGEN FREE, PLASTIC, LCC-32	PLASTIC, DIP-28	HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, LCC-32
针数	32	32	-	28	32	-	32	28	32
Reach Compliance Code	unknown	unknown	-	unknown	compliant	unknown	unknown	unknown	unknown
ECCN代码	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	-	EAR99
最长访问时间	120 ns	120 ns	-	90 ns	120 ns	-	120 ns	120 ns	120 ns
命令用户界面	NO	NO	-	NO	NO	-	NO	NO	NO
数据轮询	YES	YES	-	YES	YES	-	YES	YES	YES
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PQCC-J32	R-PQCC-J32	-	R-PDSO-G28	R-PQCC-J32	-	R-PQCC-J32	R-PDIP-T28	R-PQCC-J32
JESD-609代码	e3	e0	-	e3	e3	e3	e3	e0	e3
长度	13.965 mm	13.965 mm	-	11.8 mm	13.965 mm	-	13.965 mm	36.695 mm	13.965 mm
内存密度	65536 bit	65536 bit	-	65536 bit	65536 bit	-	65536 bit	65536 bit	65536 bit
内存集成电路类型	EEPROM	EEPROM	-	EEPROM	EEPROM	-	EEPROM	EEPROM	EEPROM
内存宽度	8	8	-	8	8	-	8	8	8
功能数量	1	1	-	1	1	-	1	1	1
端子数量	32	32	-	28	32	2	32	28	32
字数	8192 words	8192 words	-	8192 words	8192 words	-	8192 words	8192 words	8192 words
字数代码	8000	8000	-	8000	8000	-	8000	8000	8000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	-	70 °C	85 °C	155 °C	70 °C	85 °C	85 °C
组织	8KX8	8KX8	-	8KX8	8KX8	-	8KX8	8KX8	8KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	QCCJ	-	TSOP1	QCCJ	-	QCCJ	DIP	QCCJ
封装等效代码	LDCC32,.5X.6	LDCC32,.5X.6	-	TSSOP28,.53,22	LDCC32,.5X.6	-	LDCC32,.5X.6	DIP28,.6	LDCC32,.5X.6
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	TUBULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	-	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	-	CHIP CARRIER	IN-LINE	CHIP CARRIER
页面大小	32 words	32 words	-	32 words	32 words	-	32 words	32 words	32 words
并行/串行	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	-	245	-	245	NOT SPECIFIED	245
电源	5 V	5 V	-	5 V	5 V	-	5 V	5 V	5 V
编程电压	5 V	5 V	-	5 V	5 V	-	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.55 mm	3.55 mm	-	1.2 mm	3.55 mm	-	3.55 mm	5.08 mm	3.55 mm
最大待机电流	0.0001 A	0.0001 A	-	0.0001 A	0.0001 A	-	0.0001 A	0.0001 A	0.0001 A
最大压摆率	0.03 mA	0.03 mA	-	0.03 mA	0.03 mA	-	0.03 mA	0.03 mA	0.03 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	-	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	-	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	-	5 V	5 V	-	5 V	5 V	5 V
表面贴装	YES	YES	-	YES	YES	NO	YES	NO	YES
技术	CMOS	CMOS	-	CMOS	CMOS	THIN FILM	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	INDUSTRIAL	-	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin (Sn)	TIN LEAD	-	Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)	TIN LEAD	Tin (Sn)
端子形式	J BEND	J BEND	-	GULL WING	J BEND	-	J BEND	THROUGH-HOLE	J BEND
端子节距	1.27 mm	1.27 mm	-	0.55 mm	1.27 mm	-	1.27 mm	2.54 mm	1.27 mm
端子位置	QUAD	QUAD	-	DUAL	QUAD	-	QUAD	DUAL	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	-	40	-	40	NOT SPECIFIED	40
切换位	YES	YES	-	YES	YES	-	YES	YES	YES
宽度	11.425 mm	11.425 mm	-	8 mm	11.425 mm	-	11.425 mm	15.24 mm	11.425 mm
最长写入周期时间 (tWC)	5 ms	5 ms	-	5 ms	5 ms	-	5 ms	5 ms	5 ms

CAT28C64BG12

CAT28C64BG12在线购买

CAT28C64BG12概述

CAT28C64BG12规格参数

文档预览

CAT28C64BG12相似产品对比

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