Ordering number : EN7491A
50A02SS
Bipolar Transistor
–50V, –0.4A, Low VCE(sat) PNP Single SSFP
Applications
•
http://onsemi.com
Low-frequency Amplifier, high-speed switching small motor drive, muting circuit
Features
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m
Ω
[IC=0.5A, IB=50mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass epoxy board (20×30×1.6mm)
Conditions
Ratings
--50
--50
-
-5
--400
--800
200
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7029A-002
1.4
0.3
0.25
3
0 to 0.02
0.1
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
50A02SS-TL-E
Packing Type: TL
Marking
1.4
0.8
LOT No.
LOT No.
0.3
1
2
XN
0.45
0.6
0.2
TL
Electrical Connection
1
2
0.07
1 : Base
2 : Emitter
3 : Collector
SSFP
3
1
0.07
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
71812 TKIM/O3103 TSIM TA-100149 No.7491-1/7
50A02SS
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB= --40V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --10mA
VCE= --10V, IC= --50mA
VCB= --10V, f=1MHz
IC= --100mA, IB= --10mA
IC= --100mA, IB= --10mA
IC= --10μA, IE=0A
IC= --1mA, RBE=∞
IE= --10μA, IC=0A
See specified Test Circuit.
--50
--50
--5
30
170
30
200
690
3.8
--60
--0.9
-
-120
--1.2
Ratings
min
typ
max
--100
-
-100
500
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
nA
nA
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
RL
+
470μF
VCC= --25V
+
220μF
VBE=5V
IC=20IB1= --20IB2= --200mA
Ordering Information
Device
50A02SS-TL-E
Package
SSFP
Shipping
8,000pcs./reel
memo
Pb Free
No.7491-2/7
50A02SS
--500
IC -- VCE
--40
m
--450
--
A
A
mA
0m
--25m
--20
3
--600
IC -- VBE
VCE= --2V
--15m
A
--10m
A
--500
Collector Current, IC -- mA
--350
--300
--250
--200
--150
--100
--50
0
0
--5mA
--2mA
Collector Current, IC -- mA
--50m
A
--400
A
--400
--300
--500μA
--200μA
--200
--100
IB=0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT05119
Collector-to-Emitter Voltage, VCE -- mV
1000
7
5
IT05118
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
IC / IB=10
VCE= --2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
DC Current Gain, hFE
3
2
Ta=75
°
C
25
°
C
--25
°
C
--100
7
5
=7
Ta
100
7
5
3
2
C
25
°
--2
3
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
--1000
5 7--1000
IT05120
--10
--1.0
2
3
5
7 --10
2
3
Ta=75
°
C
25
°
C
--25
°
C
C
5
°
--1mA
C
5
°
5
7 --100
2
3
5
7
Collector Current, IC -- mA
3
IT05410
VCE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
2
--1000
7
5
3
2
--100
7
5
3
2
--10
--1.0
--100
7
5
3
2
7
Ta=
5
°
C
5
°
C
--2
25
°
C
75
°
C
Ta=
°
C
--25
25
°
C
--10
7
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
2
5 7--1000
IT05123
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
10
5 7--1000
IT05124
VBE(sat) -- IC
IC / IB=20
Cob -- VCB
f=1MHz
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
--1.0
Output Capacitance, Cob -- pF
7
5
Ta= --25
°
C
7
75
°
C
25
°
C
5
3
2
3
2
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000
IT05125
1.0
--1.0
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
--100
IT05122
7
No.7491-3/7
50A02SS
1000
f T -- IC
VCE= --10V
Gain-Bandwidth Product, f T -- MHz
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Ron -- IB
f=1MHz
1kΩ
IN
1kΩ
IB
OUT
7
5
3
2
ON Resistance, Ron --
Ω
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
250
5 7--1000
IT05121
0.1
--0.1
2
3
5
7
--1.0
2
3
5
PC -- Ta
Base Current, IB -- mA
--10
IT06093
7
Collector Dissipation, PC -- mW
200
M
ou
n
ted
150
on
a
gl
as
s
ep
ox
100
yb
oa
rd
(2
0
✕
3
50
0
✕
1.6
m
m
)
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°
C
IT05045
No.7491-4/7
50A02SS
Embossed Taping Specification
50A02SS-TL-E
No.7491-5/7
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