PD - 97359
IRFH5053PbF
Applications
l
l
HEXFET
®
Power MOSFET
3 Phase Boost Converter Applications
Secondary Side Synchronous Rectification
V
DSS
100V
R
DS(on)
max
18m
Ω
@V
GS
= 10V
Qg
24nC
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 10V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
D
D
D
D
S
S
S
G
PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
± 20
9.3
7.4
46
75
3.1
2.0
0.025
-55 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
1.6
40
Units
°C/W
Junction-to-Ambient
g
Notes
through
are on page 9
www.irf.com
12/16/08
1
IRFH5053PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
100
–––
–––
3.0
–––
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.11
14.4
3.7
-11
–––
–––
–––
–––
–––
24
5.2
1.5
8.6
8.7
10.1
12
0.8
12
7.5
18
4.1
1510
230
59
–––
–––
18
4.9
–––
20
250
100
-100
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 9.3A
V
V
DS
= V
GS
, I
D
= 100µA
mV/°C
µA
nA
S
e
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 7.4A
V
DS
= 50V
V
GS
= 10V
I
D
= 7.4A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
nC
nC
Ω
ns
I
D
= 7.4A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
Max.
21
7.4
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
31
210
2.8
A
75
1.3
47
320
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 7.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.4A, V
DD
= 50V
di/dt = 800A/µs
See Fig.16
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH5053PbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
0.1
4.5V
0.01
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
100
1000
0.1
4.5V
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 9.3A
VGS = 10V
2.0
ID, Drain-to-Source Current (A)
10
T J = 150°C
1.5
1
T J = 25°C
1.0
VDS = 50V
≤60µs
PULSE WIDTH
0.1
3
4
5
6
7
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRFH5053PbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 7.4A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 80V
VDS= 50V
1000
Coss
Crss
Ciss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
T A = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
Tj = 150°C
LIMITED BY R DS(on)
Single Pulse
100µsec
10
TJ = 150°C
100
1msec
10
10msec
DC
1
1
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
0.01
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFH5053PbF
10
VGS(th) , Gate Threshold Voltage (V)
4.5
8
ID, Drain Current (A)
4.0
6
3.5
ID = 100µA
3.0
4
2
2.5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
1.3862
3.6808
18.148
16.804
0.000201
0.013839
0.993400
37.6
τi
(sec)
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
0.01
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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