a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1065X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 0.7 A, dI/dt = 100 A/µs
I
S
= - 0.63 A
0.8
29.2
10.22
13.7
15.5
8
1.2
44
15.3
ns
A
V
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 6.32
I
D
- 0.95 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= - 6 V, V
GS
= - 5 V, I
D
= - 1.18 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 1.18
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
480
190
145
7.2
6.7
0.84
2.7
10
13
27
45
27
15
19.5
40.5
67.5
40.5
ns
10.8
10.1
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.18 A
V
GS
= - 2.5 V, I
D
= - 1.07 A
V
GS
= - 1.8 V, I
D
= - 0.49 A
V
DS
= - 6 V, I
D
= - 1.18 A
-8
0.108
0.131
0.158
5.18
0.156
0.190
0.245
S
- 0.45
- 12
- 8.47
2.33
- 0.95
± 100
-1
- 10
V
mV/°C
V
nA
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
8
V
GS
= 5
V
thru 2.5
V
6
I
D
- Drain C
u
rrent (A)
V
GS
= 2
V
1.5
T
C
= 25 °C
1.0
2.0
4
I
D
- Drain C
u
rrent (A)
2
V
GS
= 1.5
V
0.5
T
C
= 125 °C
V
GS
= 1.0
V
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.0
0.5
1.0
T
C
= - 55 °C
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.25
V
GS
= 1.8
V
C - Capacitance (pF)
1000
Transfer Characteristics Curves vs. Temp.
R
DS(on)
- On-Resistance (Ω)
0.20
800
0.15
V
GS
= 2.5
V
V
GS
= 4.5
V
600
C
iss
400
0.10
0.05
200
C
rss
C
oss
0.00
0
2
4
I
D
- Drain Current (A)
6
8
0
0
3
6
9
12
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.18 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
4
V
DS
= 6
V
3
1.4
Capacitance
V
GS
= 4.5
V,
I
D
= 1.18 A
1.3
V
GS
= 2.5
V,
I
D
= 1.07 A
1.2
1.1
2
V
DS
= 9.6
V
1
1.0
V
GS
= 1.8
V,
I
D
= 0.94 A
0.9
0
0
2
4
6
Q
g
- Total Gate Charge (nC)
8
0.8
- 50
- 25
0
25
50
75
100 125
V
GS
- Gate-to-Source
Voltage
(V)
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
10
0.24
I
D
= 1.09 A
I
S
- So
u
rce C
u
rrent (A)
0.18
T
A
= 125 °C
0.12
T
A
= 25 °C
0.06
1
T
J
= 150 °C
0.1
T
J
= 25 °C
0.01
0.00
0
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain
Voltage
(V)
1
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.9
- 12
R
DS(on)
vs. V
GS
vs. Temperature
0.8
- 12.5
0.7
I
D
= 250
µA
0.6
BVDSS (V)
V
GS(th)
(
V
)
- 13
0.5
- 13.5
0.4
0.3
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
- 14
- 50
- 25
0
25
50
75
100
125
150
Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
1
1 ms
10 ms
100 ms
0.1
1s
10 s
DC
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
BVDSS vs. Temparture
I
D
- Drain C
urrent
(A)
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
>
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact:
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Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?74320.
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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