IR25600(S)PBF
Dual Low Side Driver
Features
Gate drive supply range from 6V to 20V
CMOS Schmitt-triggered inputs
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
I
O+/-
V
OUT
Ton/off (typ.)
1.5A / 1.5A
6V – 20V
85 & 65 ns
Description
The IR25600(S) is a low voltage, high speed power MOSFET
and IGBT driver. Proprietary latch immune CMOS
technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-
conduction. Propagation delays between two channels are
matched.
Package Options
8 Lead SOIC
8 Lead PDIP
Ordering Information
Base Part Number
IR25600SPBF
IR25600SPBF
IR25600PBF
Standard Pack
Package Type
SO8N
SO8N
PDIP8
Form
Tube
Tape and Reel
Tube
Quantity
95
2500
50
Orderable Part Number
IR25600SPBF
IR25600STRPBF
IR25600PBF
1
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© 2013 International Rectifier
March 26, 2013
IR25600(S)PBF
Typical Connection Diagram
2
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© 2013 International Rectifier
March 26, 2013
IR25600(S)PBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to GND. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
S
V
O
V
IN
P
D
Rth
JA
T
J
T
S
T
L
Definition
Fixed supply voltage
Output voltage
Logic input voltage
Package power dissipation @ T
A
≤
+25°C
Thermal resistance, junction to
ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
8 lead PDIP
8 lead SOIC
8 lead PDIP
8 lead SOIC
Min.
-0.3
-0.3
-0.3
—
—
—
—
—
-55
—
Max.
25
V
S
+ 0.3
V
S
+ 0.3
1
0.625
125
200
150
150
300
Units
V
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. All voltage parameters are
absolute voltages references to GND.
Symbol
V
S
V
O
V
IN
T
A
Definition
Fixed supply voltage
Output voltage
Logic input voltage (IN & SD)
Ambient temperature
Min.
6
0
0
-40
Max.
20
V
S
V
S
125
Units
V
°C
3
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© 2013 International Rectifier
March 26, 2013
IR25600(S)PBF
Dynamic Electrical Characteristics
V
BIAS
(V
S
) = 15V, CL = 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol
t
on
t
off
t
r
t
f
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Min.
—
—
—
—
Typ.
85
65
15
10
Max.
160
150
35
25
ns
Figure 2
Units
Test Conditions
Static Electrical Characteristics
V
BIAS
(V
S
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
and I
IN
parameters are referenced to GND
and are applicable to input leads INA and INB. The V
O
and I
O
parameters are referenced to GND and are
applicable to the respective output leads: OUTA and OUTB.
Symbol
V
IH
V
IL
V
OH
V
OL
I
QS
I
IN+
I
IN-
I
O+
I
O-
Definition
Logic ―1‖ input voltage (OUTA = HI
and OUTB = HI)
Logic ―0‖ input voltage (OUTA = LO
and OUTB = LO)
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Quiescent V
S
supply current
Logic ―1‖ input bias current (OUT =
HI)
Logic ―0‖ input bias current (OUT =
LO)
Output high short circuit pulsed
current
Output low short circuit pulsed
current
Min.
2.7
—
—
—
—
—
—
1.5
1.5
Typ.
—
—
—
—
100
5
-10
2.3
3.3
Max.
—
0.8
1.2
0.1
200
15
-30
—
A
—
μA
V
I
O
= 0A
I
O
= 0A
V
IN
= 0V or V
S
V
IN
= V
S
V
IN
= 0V
V
O
= 0V, V
IN
= V
S
PW ≤ 10 μs
V
O
= 15V , V
IN
= 0V
PW ≤ 10 μs
Units
Test Conditions
4
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© 2013 International Rectifier
March 26, 2013
IR25600(S)PBF
Functional Block Diagram
5
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© 2013 International Rectifier
March 26, 2013
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