NVDD5894NL
Power MOSFET
Features
40 V, 10 mW, 64 A, Dual N−Channel
DPAK−5L
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
"20
64
45
75
38
14
10
3.8
1.9
324
−55
to
+175
75
94
260
A
°C
A
mJ
°C
W
DPAK 5−LEAD
CASE 175AA
A
W
S1
S2
Unit
V
V
A
G1
G2
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V
(BR)DSS
40 V
R
DS(on)
Max
10 mW @ 10 V
14.5 mW @ 4.5 V
Dual N−Channel
D
I
D
Max
64 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 25 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
YWW
58
94LG
Y
WW
5894L
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
x
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State (Drain)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
2.0
40
Unit
°C/W
S1 G1 G2 S2
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
Device
NVDD5894NLT4G
Package
Shipping
†
DPAK−5 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 0
1
Publication Order Number:
NVDD5894NL/D
NVDD5894NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dI
s
/dt = 100 A/ms
I
S
= 20A
V
GS
= 0 V
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
0.88
0.76
22.8
11.2
11.6
13.7
nC
ns
1.0
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 32 V
I
D
= 20 A, R
G
= 2.5
W
12.4
30.2
36
54
ns
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 32 V, I
D
= 20 A
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V
V
DS
= 40 V
T
J
= 25°C
T
J
= 125°C
40
1
100
±100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 50 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 10 A
1.5
8.3
11.2
8.8
2.5
10
14.5
V
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
S
2103
V
GS
= 0 V, f = 1 MHz
V
DS
= 25 V
V
GS
= 4.5 V, V
DS
= 32 V, I
D
= 20 A
V
GS
= 10 V, V
DS
= 32 V, I
D
= 20 A
259
183
21
41
1.7
6.9
11.3
3.5
pF
nC
nC
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
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2
NVDD5894NL
TYPICAL CHARACTERISTICS
120
10 to 5.2 V
110
100
90
80
70
60
50
40
30
20
10
0
V
GS
= 4.8 V
I
D
, DRAIN CURRENT (A)
4.4 V
120
110
100
90
80
70
60
50
40
30
20
10
0
T
J
= 150°C
1
2
3
T
J
=
−55°C
4
5
6
T
J
= 25°C
V
DS
= 5 V
I
D
, DRAIN CURRENT (A)
4.0 V
3.6 V
3.2 V
2.8 V
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.040
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
3.5
4.5
5.5
6.5
7.5
8.5
9.5
I
D
= 50 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
Figure 2. Transfer Characteristics
T
J
= 25°C
0.025
0.020
0.015
0.010
0.005
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
60
70
80
90 100 110
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.00
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.75
1.50
1.25
1.00
0.75
100
V
GS
= 10 V
I
D
= 50 A
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
DSS
, LEAKAGE (nA)
10,000
T
J
= 150°C
T
J
= 125°C
1000
0.50
−50 −25
0
25
50
75
100
125
150
175
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVDD5894NL
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
9
8
7
6
5
4
3
2
1
0
V
DS
= 32 V
T
J
= 25°C
I
D
= 20 A
0
5
10
15
20
25
30
35
40
45
Q
GS
Q
GD
Q
T
2500
C, CAPACITANCE (pF)
2000
1500
1000
500
0
C
ISS
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
OSS
C
RSS
0
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
GS
= 10 V
V
DD
= 32 V
I
D
= 20 A
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
20
18
16
14
12
10
8
6
4
2
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
0.01 ms
10
V
GS
= 10 V
T
C
= 25°C
650 mm
2
2 oz Cu pad
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
0.1 ms
I
PEAK
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
T
J
(initial) = 25°C
1
1 ms
10 ms
T
J
(initial) = 125°C
10
0.1
0.01
dc
100
1
1E−06
1E−05
1E−04
1E−03
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
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4
NVDD5894NL
TYPICAL CHARACTERISTICS
10
R
qJC
= 2°C/W Steady State
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
10
R(t) (°C/W)
0.1
Figure 13. Thermal Response
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