IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
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All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
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Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-22
0A
B
BYT28 series
Dual rectifier diodes ultrafast
Rev. 5 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Dual, common cathode, ultrafast, epitaxial rectifier diodes in the SOT78 (TO-220AB)
leaded package.
1.2 Features and benefits
Low forward voltage drop
Soft recovery characteristics
Low thermal resistance.
Fast switching
High thermal cycling performance
1.3 Applications
Output rectifiers in high frequency switched-mode power supplies.
1.4 Quick reference data
V
R
300 V (BYT28-300)
V
R
500 V (BYT28-500)
V
F
1.05 V.
I
O(AV)
10 A
t
rr
60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
anode 1
cathode
anode 2
mounting base; connected to cathode
2
sym084
Simplified outline
mb
Symbol
1
3
SOT78
1 2 3
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYT28-300
BYT28-500
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
Parameter
repetitive peak reverse voltage
BYT28-300
BYT28-500
V
R
continuous reverse voltage
BYT28-300
BYT28-500
I
O(AV)
I
FSM
average rectified output current
non-repetitive peak forward current
per diode
storage temperature
junction temperature
Neglecting switching and reverse current losses.
Conditions
Min
-
-
Max
300
500
300
500
10
50
55
+150
150
Unit
V
V
V
V
A
A
A
C
C
T
mb
147
C
T
mb
147
C
both diodes conducting; square
wave;
= 0.5; T
mb
115
C
t = 10 ms
t = 8.3 ms sinusoidal; with reapplied
V
RRM(max)
[1]
-
-
-
-
-
40
-
T
stg
T
j
[1]
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
per diode; see
Figure 1
both diodes conducting
in free air
Min
-
-
-
Typ
-
-
60
Max
4.5
3
-
Unit
K/W
K/W
K/W
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
2 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
10
Z
th(j-mb)
(K/W)
1
001aab919
10
−1
10
−2
P
tot
t
p
δ
=
t
p
T
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
10
t
p
(s)
Fig 1.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 5.
Characteristics
T
j
= 25
C; unless otherwise stated.
Symbol
V
F
I
R
Q
S
t
rr
I
RRM
V
fr
Parameter
forward voltage
reverse current
reverse recovery charge
reverse recovery time
repetitive peak reverse current
forward recovery voltage
Conditions
I
F
= 5 A; T
j
= 150
C
I
F
= 10 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100
C
I
F
= 2 A; V
R
30 V;
dI
F
/dt = 20 A/s;
see
Figure 9
I
F
= 1 A; V
R
30 V;
dI
F
/dt = 100 A/s;
see
Figure 6
I
F
= 5 A; V
R
30 V;
dI
F
/dt = 50 A/s;
T
j
= 100
C;
see
Figure 7
I
F
= 1 A; dI
F
/dt = 10 A/s
Min
-
-
-
-
-
-
-
-
Typ
0.95
1.3
2
10
50
50
2
2.5
Max
1.05
1.4
10
200
60
60
3
-
Unit
V
V
A
A
nC
ns
A
V
Characteristics are per diode
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
3 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
FRM
V
F
001aab911
V
F
I
R
I
RM
time
001aab912
Fig 2.
10
P
F
(W)
8
Reverse recovery definitions
001aab913
Fig 3.
105
T
mb(max)
(°C)
114
118.5
6
P
F
(W)
Forward recovery definitions
001aab914
a = 1.57
1.9
2.2
4
2.8
4
δ
= 1.0
123
T
mb(max)
(°C)
127.5
132
6
0.5
123
127.5
136.5
4
0.1
0.2
I
t
p
δ
=
t
p
T
132
136.5
141
T
t
145.5
150
0
0
1
2
3
4
5
I
F(AV)
(A)
8
I
F(AV)
(A)
2
141
2
V
o
= 0.945 V
R
s
= 0.021
Ω
145.5
0
0
2
4
6
150
Per diode.
I
F(AV)
= I
F(RMS)
.
Per diode.
a = form factor = I
F(RMS)
/ I
F(AV)
.
Fig 4.
Forward power dissipation as a function of
average forward current; maximum values
Fig 5.
Forward power dissipation as a function of
average forward current; maximum values
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
4 of 10
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