PD -94912
IRG4PC40KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
GE
= 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Lead-Free
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.1V
@V
GE
= 15V, I
C
= 25A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiencies
available
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
42
25
84
84
15
84
10
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
1.7
40
Units
°C/W
g (oz)
www.irf.com
1
12/29/03
IRG4PC40KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage 600
V
Temperature Coeff. of Breakdown Voltage 0.46 V/°C
Collector-to-Emitter Saturation Voltage
2.10 2.6
2.70
V
2.14
Gate Threshold Voltage
3.0
6.0
Temperature Coeff. of Threshold Voltage
-13
mV/°C
Forward Transconductance
7.0
14
S
Zero Gate Voltage Collector Current
250
µA
3500
Diode Forward Voltage Drop
1.3 1.7
V
1.2 1.6
Gate-to-Emitter Leakage Current
±100 nA
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 25A
V
GE
= 15V
See Fig. 2, 5
I
C
= 42A
I
C
= 25A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 25A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 15A
See Fig. 13
I
C
= 15A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
10
Typ. Max. Units
Conditions
120 180
I
C
= 25A
16
24
nC
V
CC
= 400V
See Fig.8
51
77
V
GE
= 15V
53
33
T
J
= 25°C
ns
110 160
I
C
= 25A, V
CC
= 480V
100 150
V
GE
= 15V, R
G
= 10Ω
0.95
Energy losses include "tail"
0.76
mJ See Fig. 9,10,14
1.71 2.3
µs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
52
T
J
= 150°C,
37
I
C
= 25A, V
CC
= 480V
ns
220
V
GE
= 15V, R
G
= 10Ω
140
Energy losses include "tail"
2.67
mJ See Fig. 11,14
13
nH
Measured 5mm from package
1600
V
GE
= 0V
130
pF
V
CC
= 30V
See Fig. 7
55
= 1.0MHz
42
60
ns
T
J
= 25°C See Fig.
74 120
T
J
= 125°C
14
I
F
= 15A
4.0 6.0
A
T
J
= 25°C See Fig.
6.5
10
T
J
= 125°C
15
V
R
= 200V
80 180
nC
T
J
= 25°C
See Fig.
220 600
T
J
= 125°C
16
di/dt = 200Aµs
188
A/µs T
J
= 25°C
See Fig.
160
T
J
= 125°C
17
2
www.irf.com
IRG4PC40KDPbF
30
For both:
25
LOAD CURRENT (A)
20
Square wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
35
W
15
60% of rated
voltage
I
10
5
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
T
J
= 25°C
T
J
= 150
o
C
10
10
T
J
= 25
o
C
1
0.1
V
GE
= 15V
20µs PULSE WIDTH
1
10
1
5
7
V
CC
= 50V
5µs PULSE WIDTH
A
9
11
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
www.irf.com
3
IRG4PC40KDPbF
50
5.0
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
Maximum DC Collector Current(A)
40
I
C
= 50 A
4.0
30
3.0
20
I
C
= 25 A
2.0
10
I
C
=12.5 A
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC40KDPbF
3000
2500
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 25A
16
C, Capacitance (pF)
2000
Cies
1500
12
8
1000
500
4
0
Coes
Cres
1
10
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
100
120
140
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.00
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 25A
100
R
G
=
10Ω
Ohm
V
GE
= 15V
V
CC
= 480V
2.50
10
I
C
=
50
A
I
C
=
25
A
2.00
1
I
C
=
12.5
A
1.50
0
R Gate Resistance
Ω )
R
G
G
,
Gate Resistance
(
(Ohm)
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
