Si4559EY
Vishay Siliconix
N- and P-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
60
- 60
R
DS(on)
(Ω)
0.055 at V
GS
= 10 V
0.075 at V
GS
= 4.5 V
0.120 at V
GS
= - 10 V
0.150 at V
GS
= - 4.5 V
I
D
(A)
± 4.5
± 3.9
± 3.1
± 2.8
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
Ordering Information:
Si4559EY-T1-E3 (Lead (Pb)-free)
Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
60
± 20
± 4.5
± 3.8
± 30
2.0
2.4
1.7
- 55 to 175
P-Channel
- 60
± 20
± 3.1
± 2.6
± 30
- 2.0
W
°C
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
a
Symbol
R
thJA
N- or P-Channel
62.5
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
1
Si4559EY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 10 V
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 4.5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.1 A
V
GS
= 4.5 V, I
D
= 3.9 A
V
GS
= - 4.5 V, I
D
= - 2.8 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
N-Channel
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.5 A
P-Channel
V
DS
= - 30 V, V
GS
= - 10 V
I
D
= - 3.1 A
N-Channel
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
P-Channel
V
DD
= - 30 V, R
L
= 30
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
I
F
= 2 A, dI/dt = 100 A/µs
I
F
= - 2 A, dI/dt = 100 A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
19
16
4
4
3
1.6
13
8
11
10
36
12
11
35
35
60
20
15
20
20
60
25
20
50
60
90
ns
30
25
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 4.5 A
V
DS
= - 15 V, I
D
= - 3.1 A
I
S
= 2.0 A, V
GS
= 0 V
I
S
= - 2.0 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.045
0.100
0.055
0.125
13
7.5
0.9
- 0.8
1.2
- 1.2
0.055
0.120
0.075
0.150
S
V
Ω
1
-1
± 100
± 100
2
-2
25
- 25
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
Si4559EY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 V thru 5 V
24
4V
18
I
D
- Drain Current (A)
I
D
-
Drain Current (A)
24
25 °C
18
150 °C
30
T
C
= - 55 °C
12
12
6
2 V, 1 V
0
0
1
2
3
4
5
3V
6
0
0
1
2
3
4
5
6
V
DS
-
Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.150
1400
1200
C
iss
0.100
C - Capacitance (pF)
1000
800
600
C
oss
400
200
C
rss
0
0
6
12
18
24
30
0
0
Transfer Characteristics
0.125
R
DS(on)
-
On-Resistance (Ω)
0.075
V
GS
= 4.5 V
0.050
V
GS
= 10 V
0.025
12
24
36
48
60
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 4.5 A
2.2
I
D
= 4.5 V
1.9
V
DS
= 30 V
6
R
DS(on)
-
On-Resistance
(Normalized)
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
V
GS
= 10 V
1.6
1.3
4
1.0
2
0.7
0
0
4
8
12
16
20
0.4
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
-
Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
3
Si4559EY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
0.10
I
D
= 4.5 A
10
R
DS(on)
-
On-Resistance (Ω)
0.08
I
S
- Source Current (A)
0.06
0.04
T
J
= 175 °C
T
J
= 25 °C
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
40
V
GS(th)
Variance (V)
0.0
I
D
= 250
µA
- 0.2
- 0.4
- 0.6
10
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
175
Power (W)
30
50
On-Resistance vs. Gate-to-Source Voltage
20
0.01
0.1
1
Time (s)
10
30
T
J
- Temperature (°C)
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Single Pulse Power
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
Si4559EY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 V, 9 V, 8 V, 7 V, 6 V
24
I
D
- Drain Current (A)
I
D
-
Drain Current (A)
5V
18
16
20
T
C
= - 55 °C
- 150 °C
12
25 °C
12
4V
6
3V
0
0
1
2
3
4
5
6
8
4
0
0
2
4
6
8
V
DS
-
Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
1.0
1400
1200
R
DS(on)
-
On-Resistance (Ω)
0.8
C - Capacitance (pF)
1000
800
600
400
Transfer Characteristics
C
iss
0.6
0.4
V
GS
= 4.5 V
0.2
V
GS
= 10 V
C
oss
200
0
C
rss
0
0
4
8
12
16
20
I
D
-
Drain Current (A)
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 3.1 A
2.0
I
D
= 3.1 A
1.6
V
DS
= 30 V
6
R
DS(on)
-
On-Resistance
(Normalized)
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
V
GS
= 10 V
1.2
4
0.8
2
0.4
0
0
4
8
12
16
20
Q
g
-
Total Gate Charge (nC)
0
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
5
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