®
BUZ71
N - CHANNEL 50V - 0.085Ω - 17A TO-220
STripFET™ POWER MOSFET
TYPE
BUZ71
s
s
s
s
s
V
DSS
50 V
R
DS(on)
< 0.1
Ω
I
D
17 A
TYPICAL R
DS(on)
= 0.085
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
2
1
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
b
O
V
GS
I
D
I
DM
so
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
3
Parameter
Value
50
50
±
20
17
68
60
-65 to 175
175
E
55/150/56
Unit
V
V
V
A
A
W
o
o
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
P
tot
T
stg
T
j
C
C
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
1/8
BUZ71
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2.5
62.5
o
o
C/W
C/W
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Value
17
50
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
GS
= 0
Min.
50
Typ.
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
j
= 125 C
o
ON (∗)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
V
GS
= 10 V
Test Conditions
I
D
= 1 mA
I
D
= 9 A
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
SWITCHING
O
so
b
Symbol
t
d(on)
t
r
t
d(of f)
t
f
te
le
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
r
P
uc
od
s)
t(
bs
-O
I
D
= 9 A
f = 1 MHz
et
l
o
P
e
Min.
2.1
od
r
Typ.
3
0.085
s)
t(
uc
V
1
10
µA
µA
nA
±
100
Max.
4
0.1
V
Ω
Max.
Unit
Unit
Test Conditions
Min.
4
Typ.
7.7
760
100
30
Max.
Unit
S
pF
pF
pF
V
DS
= 25 V
V
DS
= 25 V
V
GS
= 0
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
DD
= 30 V
R
GS
= 50
Ω
I
D
= 8 A
V
GS
= 10 V
Min.
Typ.
20
65
70
35
Max.
Unit
ns
ns
ns
ns
2/8
BUZ71
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
5/8
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