Si3446ADV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
20
± 12
6
a
5.9
5.8
b, c
4.7
b, c
20
2.7
1.7
b, c
3.2
2.1
2
b, c
1.25
b, c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Maximum Junction-to-Foot
Junction-to-Ambient
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 73772
S09-0702-Rev. B, 27-Apr-09
www.vishay.com
1
Si3446ADV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 4.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4.7 A, V
GS
= 0 V
0.8
21
12
13
8
T
C
= 25 °C
6
20
1.2
40
25
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5.8 A
V
GS
= 2.5 V, I
D
= 1.5 A
V
DS
= 10 V, I
D
= 5.8 A
Min.
20
Typ.
Max.
Unit
V
21.5
-4
0.8
1.8
± 100
1
10
20
0.031
0.053
15
640
0.037
0.065
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5.8 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.8 A
f = 1 MHz
V
DD
= 10 V, R
L
= 2.1
Ω
I
D
≅
4.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
110
60
13
5.6
1.45
1.4
2.8
50
120
30
40
7
75
180
45
60
15
130
40
15
20
9
pF
nC
Ω
ns
V
DD
= 10 V, R
L
= 2.1
Ω
I
D
≅
4.7 A, V
GEN
= 10 V, R
g
= 1
Ω
86
25
10
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73772
S09-0702-Rev. B, 27-Apr-09
Si3446ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 3
V
thru 5
V
I
D
- Drain C
u
rrent (A)
10
I
D
- Drain C
u
rrent (A)
16
8
12
V
GS
= 2.5
V
8
6
T
C
= - 55 °C
T
C
= 125 °C
2
T
C
= 25 °C
4
4
V
GS
= 2
V
V
GS
= 1.5
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
900
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
750
C - Capacitance (pF)
0.08
C
iss
600
0.06
V
GS
= 2.5
V
450
300
C
oss
150
C
rss
0
4
8
12
16
20
0.04
V
GS
= 4.5
V
0.02
0
4
8
12
16
20
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
G
S
- Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 5.8 A
8
V
DS
= 10
V
6
V
DS
= 16
V
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
I
D
= 5.8 A
Capacitance
V
GS
= 2.5
V
1.2
V
GS
= 4.5
V
1.0
4
0.8
2
0.6
0
0
2
4
6
8
10
12
14
0.4
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73772
S09-0702-Rev. B, 27-Apr-09
www.vishay.com
3
Si3446ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
R
DS(on)
- Drai-to-Source On-Resistance (mΩ)
0.10
I
D
= 5.8 A
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
125 °C
25 °C
10
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
T
J
= 25 °C
1
0.0
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
V
GS(th)
(
V
)
Po
w
er (W)
30
1.0
0.9
0.8
0.7
0.6
0.5
- 50
10
I
D
= 250
µA
40
50
On-Resistance vs. Gate-to-Source Temperature
20
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73772
S09-0702-Rev. B, 27-Apr-09
Si3446ADV
Vishay Semiconductors
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
4
8
3
I
D
- Drain C
u
rrent (A)
6
Package Limited
4
Po
w
er Dissipation (
W
)
2
1
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
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