MJH11017, MJH11019,
MJH11021 (PNP)
MJH11018, MJH11020,
MJH11022 (NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
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•
High DC Current Gain @ 10 Adc — h
FE
= 400 Min (All Types)
•
Collector−Emitter Sustaining Voltage
V
CEO(sus)
= 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
•
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 1.2 V (Typ) @ I
C
= 5.0 A
= 1.8 V (Typ) @ I
C
= 10 A
•
Monolithic Construction
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
Max
150
200
250
150
200
250
5.0
15
30
0.5
150
1.2
–65 to
+150
Unit
Vdc
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
EMITTER 3
MJH11017
MJH11019
MJH11021
V
CB
Vdc
1
Vdc
Adc
Adc
W
W/_C
_C
SOT−93
(TO−218)
CASE 340D
STYLE 1
2
3
TO−247
CASE 340L
STYLE 3
V
EB
I
C
I
B
P
D
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.83
Unit
_C/W
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
July, 2012
−
Rev. 9
1
Publication Order Number:
MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247
TO−218
MJH110xx
AYWWG
AYWWG
MJH110xx
1 BASE
3 EMITTER
2 COLLECTOR
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Device Code
xx = 17, 19, 21, 18, 20, 22
1 BASE
3 EMITTER
2 COLLECTOR
A
Y
WW
G
MJH110xx
ORDERING INFORMATION
Device Order Number
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
Package Type
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
Shipping
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
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2
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Î
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Î Î Î Î
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Delay Time
Small−Signal Current Gain (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Current−Gain Bandwidth Product (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
Base−Emitter Saturation Voltage (I
C
= 15 Adc, I
B
= 150 mA)
Base−Emitter On Voltage (I
C
= 10 A, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 100 mA)
(I
C
= 15 Adc, I
B
= 150 mA)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
Emitter Cutoff Current (V
BE
= 5.0 Vdc I
C
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
J
= 150_C)
Collector Cutoff Current
(V
CE
= 75 Vdc, I
B
= 0)
(V
CE
= 100 Vdc, I
B
= 0)
(V
CE
= 125 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 0.1 Adc, I
B
= 0)
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Characteristic
Characteristic
PD, POWER DISSIPATION (WATTS)
160
100
120
140
20
40
60
80
0
0
20
(V
CC
= 100 V, I
C
= 10 A, I
B
= 100 mA
V
BE(off)
= 5.0 V) (See Figure 2)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
40
Figure 1. Power Derating
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
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MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
3
140
V
CEO(sus)
Symbol
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CEO
I
EBO
I
CEV
C
ob
h
FE
h
fe
f
T
t
d
t
s
t
r
t
f
160
NPN
Min
150
400
100
150
200
250
2.5
4.4
1.2
3.0
75
−
−
−
−
−
−
−
−
−
−
−
−
Typical
15,000
−
PNP
Max
400
600
2.5
2.7
0.5
3.8
2.8
2.5
4.0
2.0
0.5
5.0
1.0
1.0
1.0
75
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
pF
ns
ms
ms
ms
−
−
−
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
V
CC
100 V
R
C
TUT
R
B
& R
C
varied to obtain desired current levels
D
1
, must be fast recovery types, e.g.:
1N5825 used above I
B
≈
100 mA
MSD6100 used below I
B
≈
100 mA
V2
APPROX
+12 V
0
V1
APPROX
- 8.0 V
R
B
SCOPE
51
D
1
+ 4.0 V
For t
d
and t
r
, D
1
is disconnected
and V2 = 0
25
ms
t
r
, t
f
≤
10 ns
Duty Cycle = 1.0%
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.02
0.01
SINGLE PULSE
R
qJC
(t) = r(t) R
qJC
R
qJC
= 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200 300
500
1000
0.02 0.03
0.05
Figure 3. Thermal Response
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
T
C
= 25°C SINGLE PULSE
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
2.0 3.0 5.0 10
20 30 50
100 150 250
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
30
20
10
5.0
2.0
1.0
0.5
0.2
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
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4
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
30
IC, COLLECTOR CURRENT (AMPS)
L = 200
mH
I
C
/I
B1
≥
50
T
C
= 100°C
V
BE(off)
= 0 - 5.0 V
R
BE
= 47
W
DUTY CYCLE = 10%
REVERSE BIAS
20
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
140
60
100
180
220
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
260
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
PNP
10,000
7000
5000
hFE , DC CURRENT GAIN
3000
2000
1000
500
- 55°C
T
C
= 150°C
25°C
10,000
V
CE
= 5.0 V
hFE , DC CURRENT GAIN
5000
V
CE
= 5.0 V
NPN
T
C
= 150°C
2000
1000
500
- 55°C
200
100
25°C
200
100
0.2
0.3
0.5 0.7
1.0
3.0
5.0
10
15
0.2
0.3
0.5 0.7 1.0
3.0
5.0 7.0
10
15
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
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