IRFH5306PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
8.1
7.8
1.4
44
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Control MOSFET for buck converters
Features and Benefits
Features
Low charge (typical 7.8nC)
Low thermal resistance to PCB (< 4.9°C/W)
100% Rg tested
Low profile (< 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
Lower switching losses
Increased power density
Increased reliability
Increased power density
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
results in
⇒
Orderable part number
IRFH5306TRPBF
IRFH5306TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
±20
15
13
44
28
60
3.6
26
0.029
-55 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes
through
are on page 9
1
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2015 International Rectifier
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March 17, 2015
IRFH5306PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
6.9
11
1.8
-6.4
–––
–––
–––
–––
–––
7.8
1.8
1.1
3.0
1.9
4.1
4.9
1.4
9.0
26
9.1
6.1
1125
230
102
Max. Units
–––
–––
8.1
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
mΩ
V
GS
= 4.5V, I
D
= 15A
13.3
2.35
V
V
DS
= V
GS
, I
D
= 25μA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
5.0
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
e
e
100
-100
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 15A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 15A
See Fig.17 & 18
nC
nC
Ω
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 15A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Max.
46
15
Conditions
MOSFET symbol
D
Avalanche Characteristics
E
AS
I
AR
Diode Characteristics
d
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
17
Units
mJ
A
Max. Units
44
A
60
1.0
26
V
ns
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 25°C, I
F
= 15A, V
DD
= 15V
e
–––
18
27
nC di/dt = 200A/μs
Time is dominated by parasitic Inductance
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θ
JC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Ambient
g
Junction-to-Ambient
g
f
Junction-to-Case
f
Junction-to-Case
Parameter
Typ.
–––
–––
–––
–––
Max.
4.9
24
35
22
Units
°C/W
2
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March 17, 2015
IRFH5306PbF
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
2.7V
1
2.7V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 15A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
TJ = 150°C
10
TJ = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
1.0
1
2
3
4
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 15A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
March 17, 2015
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IRFH5306PbF
100
100
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
10msec
1msec
10
10
T J = 150°C
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
1
0
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
45
Fig 8.
Maximum Safe Operating Area
3.0
VGS(th), Gate threshold Voltage (V)
40
35
ID, Drain Current (A)
2.5
30
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
1.5
ID = 25μA
ID = 500μA
ID = 1.0mA
ID = 1.0A
-75 -50 -25
0
25
50
75 100 125 150
1.0
0.5
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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March 17, 2015
IRFH5306PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
25
EAS , Single Pulse Avalanche Energy (mJ)
200
ID = 15A
20
180
160
140
120
100
80
60
40
20
0
25
50
75
ID
TOP
3.9A
7.7A
BOTTOM 15A
15
T J = 125°C
10
T J = 25°C
5
0
2
4
6
8
10
12
14
16
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2015 International Rectifier
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March 17, 2015
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