END OF LIFE
HEXFET
®
Power MOSFET
l
l
l
l
l
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IRF9952QPbF
D1
D1
D2
D2
PD - 96115B
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
N-Ch P-Ch
V
DSS
30V
-30V
6
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.10Ω 0.25Ω
Description
These HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these HEXFET
Power MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel
.
Package
Type
SO-8
SO-8
Standard Pack
Form
Tape and Reel
Tube
Quantity
4000
95
EOL
Notice
SO-8
Base part number Orderable part number
IRF9952QTRPbF
IRF9952QPbF
Replacement Part Number
IRF9952QPbF
EOL 529
Please search the EOL part number on IR’s website for
guidance
EOL 529
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
N-Channel
Maximum
P-Channel
30
± 20
-2.3
-1.8
-10
-1.3
2.0
1.3
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
3.5
2.8
16
1.7
A
W
57
-1.3
mJ
A
mJ
V/ ns
°C
44
2.0
0.25
5.0
-55 to + 150
-5.0
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
www.irf.com
1
10/03/14
IRF9952QPbF
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
END OF LIFE
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
1.0
-1.0
Typ. Max.
0.015
0.015
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
12
2.4
2.0
-2.0
25
-25
±100
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
6.2 12
9.7 19
8.8 18
14
28
13
26
20
40
3.0 6.0
6.9 14
190
190
120
110
61
54
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 2.2A
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 3.5A
V
DS
= -15V, I
D
= -2.3A
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ±20V
N-Channel
I
D
= 1.8A, V
DS
= 10V, V
GS
= 10V
P-Channel
I
D
= -2.3A, V
DS
= -10V, V
GS
= -10V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
1.7
-1.3
A
16
16
0.82 1.2
T
J
= 25°C, I
S
= 1.25A, V
GS
= 0V
V
-0.82 -1.2
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
27
53
N-Channel
ns
27
54
T
J
= 25°C, I
F
=1.25A, di/dt = 100A/µs
28
57
P-Channel
nC
T
J
= 25°C, I
F
= -1.25A, di/dt = 100A/µs
31
62
Repetitive rating; pulse width limited by
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 23 )
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
2.0A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.3A, di/dt
≤
84A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 22mH R
G
= 25Ω, I
AS
= 2.0A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 67mH R
G
= 25Ω, I
AS
= -1.3A.
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2
END OF LIFE
N-Channel
100
IRF9952QPbF
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
10
10
3.0V
20μs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
3.0V
20μs PULSE WIDTH
T
J
= 150°C
A
0.1
1
10
1
1
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
10
10
T
J
= 25°C
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
1
1
3.0
3.5
4.0
4.5
V
DS
= 10V
20μs PULSE WIDTH
5.0
5.5
6.0
A
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF9952QPbF
2.0
END OF LIFE
N-Channel
0.12
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
I
D
= 2.2A
0.10
V
GS
= 4.5V
1.0
0.08
0.5
0.06
V
GS
= 10V
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
0.04
0
2
4
6
8
10
12
A
T
J
, Junction Temperature (
°
C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS
(on) , Drain-to-Source On Resistance (Ω)
E
AS
, Single Pulse Avalanche Energy (mJ)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
3
6
9
12
15
100
TOP
80
BOTTOM
I
D
0.89A
1.6A
2.0A
60
I
D
= 3.5A
40
20
A
0
25
50
75
100
125
150
A
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (°C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
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4
END OF LIFE
N-Channel
350
IRF9952QPbF
I
D
= 1.8A
V
DS
= 10V
300
V
GS
, Gate-to-Source Voltage (V)
A
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
16
C, Capacitance (pF)
250
C
iss
C
oss
200
12
150
8
100
C
rss
4
50
0
1
10
100
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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