Freescale Semiconductor
Technical Data
Document Number: MRF6S19120H
Rev. 2, 12/2008
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
•
Typical Single--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 19 Watts Avg., f = 1990 MHz, IS--95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — --54 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19120HR3
MRF6S19120HSR3
1930-
-1990 MHz, 19 W AVG., 28 V
SINGLE N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF6S19120HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
Symbol
R
θJC
Value
(2,3)
0.43
0.45
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
MRF6S19120HR3 MRF6S19120HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 270
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1000 mAdc Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.7 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.95
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 19 W Avg. N--CDMA, f = 1990 MHz,
Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
ACPR
IRL
14
20
—
—
15
21.5
--54
--13
17
—
--48
--9
dB
%
dBc
dB
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
V
BIAS
+
R1
C9
C5
C7
B1
C4
R2
C3
Z6
Z1
C1
Z2
Z3
Z4
Z5
DUT
Z7
Z8
C6
C8
+
C10
+
C11
+
C12
+
C13
+
C14
V
SUPPLY
RF
INPUT
Z9
C2
Z10
RF
OUTPUT
ARCHIVE INFORMATION
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part
B1
C1, C2
C3, C4
C5, C6
C7, C8
C9
C10, C11
C12, C13
C14
R1
R2
Short RF Bead
10 pF Chip Capacitors
5.1 pF Chip Capacitors
1.0 nF Chip Capacitors
0.1
μF
Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitors
22
μF,
50 V Tantalum Chip Capacitors
470
μF,
63 V Electrolytic Capacitor, Radial
560 KΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Description
Part Number
2743019447
ATC100B100JT500XT
ATC100B5R1CT500XT
ATC100B102JT500XT
C1825C100J5RAC
T491X106K035AT
GRM55DR61H106KA88L
T491C105K022AT
EMVY630GTR471MLN0S
CRCW12065603FKEA
CRCW120610R0FKEA
Manufacturer
Fair--Rite
ATC
ATC
ATC
Kemet
Kemet
Murata
Kemet
Nippon Chemi--Con
Vishay
Vishay
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
1.242″ x 0.084″ Microstrip
0.839″ x 0.084″ Microstrip
0.230″ x 0.180″ Microstrip
0.320″ x 1.100″ Microstrip
0.093″ x 1.100″ Microstrip
0.160″ x 1.098″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.387″ x 1.098″ Microstrip
0.169″ x 0.316″ Microstrip
0.781″ x 0.084″ Microstrip
1.228″ x 0.084″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
C9
C4
B1
R2
C3
C11 C10
C13
C6 C8
C12
R1
C5 C7
C14
C1
C2
ARCHIVE INFORMATION
CUT OUT AREA
MRF6S19120 Rev. 0
Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout
MRF6S19120HR3 MRF6S19120HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
15.6
15.4
15.2
G
ps
, POWER GAIN (dB)
15
14.8
14.6
14.4
14.2
IRL
ACPR
ALT1
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 1000 mA
Single--Carrier N--CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
26
24
22
20
--45
--50
--55
--60
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 19 Watts Avg.
15.6
15.4
15.2
G
ps
, POWER GAIN (dB)
15
14.8
14.6
14.4
14.2
ACPR
ALT1
IRL
η
D
32
30
28
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1000 mA
Single--Carrier N--CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
--40
--45
--50
--55
14
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 32 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1500 mA
16
G
ps
, POWER GAIN (dB)
1250 mA
--20
--25
--30
--35
--40
--45
--50
--55
0.6
1000 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
1250 mA
V
DD
= 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
I
DQ
= 500 mA
750 mA
1500 mA
15 1000 mA
750 mA
14
13
12
500 mA
V
DD
= 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
0.6
1
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
5
ACPR (dBc), ALT1 (dBc)
--35
--10
--12
--14
--16
--18
--20
--22
--24
--26
IRL, INPUT RETURN LOSS (dB)
G
ps
26
ARCHIVE INFORMATION
--65
14
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
--10
--12
--14
--16
--18
--20
--22
--24
--26
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
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