IRF1407SPbF
IRF1407LPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
D
D
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-profile
applications.
Base part number
IRF1407LPbF
IRF1407SPbF
Package Type
TO-262
D2-Pak
75V
0.0078
100A
S
G
D2 Pak
IRF1407SPbF
G
TO-262 Pak
IRF1407LPbF
S
D
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF1407LPbF (Obsolete)
IRF1407STRLPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
100
70
520
3.8
200
1.3
± 20
390
See Fig.15,16, 12a, 12b
4.6
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
2016-5-26
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Min.
75
–––
–––
2.0
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
IRF1407S/LPbF
Typ. Max. Units
Conditions
–––
–––
V V
GS
= 0V, I
D
= 250µA
0.09 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.0078
V
GS
= 10V, I
D
= 78A
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
–––
–––
S V
DS
= 25V, I
D
= 78A
–––
20
V
DS
=75 V, V
GS
= 0V
µA
–––
250
V
DS
= 60V,V
GS
= 0V,T
J
=150°C
–––
200
V
GS
= 20V
nA
-200
V
GS
= -20V
160
250
I
D
= 78A
nC
V
DS
= 60V
35
52
V
GS
= 10V
54
81
11
–––
V
DD
= 38V
150
–––
I
D
=78A
ns
150
–––
R
G
= 2.5
V
GS
= 10V
140
–––
Between lead,
4.5
–––
6mm (0.25in.)
nH
from package
7.5
–––
and center of die contact
5600 –––
V
GS
= 0V
890
–––
V
DS
= 25V
ƒ = 1.0kHz, See Fig. 5
190
–––
pF
5800 –––
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0kHz
560
–––
V
GS
= 0V, V
DS
= 60V ƒ = 1.0kHz
1100 –––
V
GS
= 0V, V
DS
= 0V to 60V
Typ.
–––
–––
–––
110
390
Max. Units
100
520
1.3
170
590
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 78A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 78A
nC di/dt = 100A/µs
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 0.13mH, R
G
= 25, I
AS
= 78A, V
GS
=10V. (See fig. 12)
I
SD
78A,
di/dt
320A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
Uses IRF1407 data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2016-5-26
IRF1407S/LPbF
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
4.5V
10
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.00
3.0
I
D
= 130A
ID, Drain-to-Source Current
)
TJ = 25°C
2.5
R
DS(on)
, Drain-to-Source On Resistance
TJ = 175°C
2.0
100.00
(Normalized)
1.5
1.0
0.5
VDS = 25V
10.00
3.0
5.0
7.0
9.0
20µs PULSE WIDTH
11.0
13.0
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Tem
perature
(
°
C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2016-5-26
3
IRF1407S/LPbF
100000
VGS = 0V,
f = 1 kHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
V
GS
, Gate-to-Source Voltage (V)
15
I
D
=
78A
C, Capacitance(pF)
Coss = Cds + Cgd
12
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
10000
Ciss
9
1000
Coss
6
Crss
100
1
10
100
3
0
0
40
80
120
160
200
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
100.00
T J = 175°C
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
1.0
2.0
3.0
VSD , Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
100
1000
1
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2016-5-26
IRF1407S/LPbF
120
LIMITED BY PACKAGE
100
80
I
D
, Drain Current (A)
60
40
Fig 10a.
Switching Time Test Circuit
20
0
25
50
75
100
125
150
175
T
C
, Case Temperature
(°
C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty f actor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJC
0.05
t
2
0.01
0.00001
+T
C
1
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-26
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