Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.0045 @ V
GS
= 10 V
0.0055 @ V
GS
= 4.5 V
I
D
(A)
20
19
D
TrenchFETr Power MOSFET
D
Optimized for “Low Side” Synchronous
Rectifier Operation
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
SO-8
D
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
a
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limits
30
"12
20
15
60
2.9
3.5
2.2
−55
to 150
Unit
A
W
THERMAL RESISTANCE RATINGS
a
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t
v
10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
_C/W
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 19 A
V
DS
= 15 V, I
D
= 20 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0035
0.0042
90
0.75
1.1
0.0045
0.0055
0.6
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
42
12.8
7.7
1.3
17
14
158
43
50
2.2
30
25
230
65
80
ns
W
55
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 3 V
50
40
30
20
10
0
0
2
4
6
8
10
2V
50
40
30
20
60
Transfer Characteristics
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
T
C
= 125_C
10
0
0.0
25_C
−55_C
1.5
2.0
2.5
3.0
0.5
1.0
V
DS
−
Drain-to-Source Voltage (V)
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V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
2
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
8000
Capacitance
r
DS(on)
−
On-Resistance (
W
)
0.008
C
−
Capacitance (pF)
6000
C
iss
0.006
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.002
4000
2000
C
oss
C
rss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 20 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
4
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.025
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.020
I
S
−
Source Current (A)
0.015
T
J
= 25_C
0.010
I
D
= 20 A
0.005
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
−
Source-to-Drain Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
0.000
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
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3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
−0.0
Power (W)
−0.2
−0.4
−0.6
−0.8
−50
I
D
= 250
mA
60
50
Single Pulse Power
40
30
20
10
−25
0
25
50
75
100
125
150
0
10
−2
10
−1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71628
S-40762—Rev. E, 19-Apr-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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