PD - 96280
IRF6711SPbF
IRF6711STRPbF
l
l
l
l
l
l
l
l
l
RoHS Compliant and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques
100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET
R
DS(on)
Q
gs2
1.8nC
V
DSS
Q
g
tot
V
GS
Q
gd
4.4nC
R
DS(on)
Q
oss
9.5nC
25V max ±20V max 3.0mΩ @ 10V 5.2mΩ @ 4.5V
Q
rr
21nC
V
gs(th)
1.8V
13nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6711STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
15
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
19
15
84
150
62
15
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
ID= 15A
VDS= 20V
VDS= 13V
A
mJ
A
ID = 15A
10
TJ = 125°C
5
TJ = 25°C
2
4
6
8
10
0
12
14
16
18
20
35
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.54mH, R
G
= 25Ω, I
AS
= 15A.
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1
11/11/09
IRF6711SPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
78
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
19
3.0
5.2
1.8
-6.4
–––
–––
–––
–––
–––
13
3.1
1.8
4.4
3.7
6.2
9.5
0.4
7.7
13
7.1
5.4
1810
470
210
–––
–––
3.8
6.5
Conditions
V V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 19A
mΩ
V
GS
= 4.5V, I
D
= 15A
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
V
DS
= 20V, V
GS
= 0V
1.0
µA
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
150
100
nA V
GS
= 20V
-100
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
S
V
GS
= -20V
V
DS
= 13V, I
D
= 15A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 15A
See Fig.2, 15
nC
Ω
i
i
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 15A
R
G
= 1.5Ω
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Ãi
ns
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
17
21
52
A
150
1.0
26
32
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 25°C, I
F
= 15A
di/dt = 370A/µs
Ãg
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6711SPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
Thermal Response ( Z thJA )
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
eÃ
W/°C
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
A
τ
1
τ
2
τ
3
τ
3
τ
A
1
0.1
Ri (°C/W)
τi
(sec)
5.276
0.00315
30.637
22.09
0.75858
36.9
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6711SPbF
1000
1000
≤
60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
10
10
2.5V
1
1
2.5V
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
Fig 5.
Typical Output Characteristics
2.0
ID = 19A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
V GS = 10V
1.5
V GS = 4.5V
1.0
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
30
25
T J = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
Ciss
1000
Coss
20
15
10
5
0
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6711SPbF
1000
TJ = 150°C
TJ = 25°C
TJ = -40°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
DC
10msec
1
T A = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
10
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
T J = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
90
80
70
ID, Drain Current (A)
Fig11.
Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
2.5
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
300
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
0.91A
1.16A
BOTTOM 15A
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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