(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Storage/Operating Case Temperature Range
Operating Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
C
T
J
Value
400
Unit
V
1.5
3.0
50
−55
to 150
−55
to 150
A
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (on 1″ sq. Cu. PCB pattern)
1. Minimum pad size.
Symbol
R
tjl
R
tja
Value
18
79
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 2), see Figure 2
(I
F
= 1.5 A)
(I
F
= 2.25 A)
Maximum Instantaneous Reverse Current, see Figure 4
(V
R
= 400 V)
(V
R
= 200 V)
2. Pulse Test: Pulse Width
≤
250
ms,
Duty Cycle
≤
2.0%
Symbol
V
F
T
J
= 25_C
1.04
1.10
1.0
0.5
T
J
= 100_C
0.96
1.02
340
180
Unit
V
I
R
mA
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2
MRS1504T3G, NRVS1504T3G
100
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
10
T
J
= 100°C
1.0
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
0.1
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.6
10
T
J
= 100°C
1.0
T
J
= 150°C
T
J
= 25°C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I R, MAXIMUM REVERSE CURRENT (AMPS)
100E-6
I R, REVERSE CURRENT (AMPS)
10E-6
T
J
= 150°C
T
J
= 100°C
10E-3
1.0E-3
T
J
= 150°C
T
J
= 100°C
100E-6
10E-6
1.0E-6
1.0E-6
100E-9
T
J
= 25°C
T
J
= 25°C
10E-9
100E-9
10E-9
0
1.0E-9
0
Figure 3. Typical Reverse Current
100
200
300
V
R
, REVERSE VOLTAGE (VOLTS)
400
Figure 4. Maximum Reverse Current
100
200
300
V
R
, REVERSE VOLTAGE (VOLTS)
400
I O , AVERAGE FORWARD CURRENT (AMPS)
dc
2.0
SQUARE WAVE
1.5
I
pk
/I
o
=
p
I
pk
/I
o
= 5
I
pk
/I
o
= 10
0.5
0
0
20
40
I
pk
/I
o
= 20
PFO , AVERAGE POWER DISSIPATION (WATTS)
2.5
FREQ = 20 kHz
2.5
dc
2.0
SQUARE WAVE
I
pk
/I
o
=
p
1.5
I
pk
/I
o
= 10
1.0
I
pk
/I
o
= 20
0.5
0
0
I
pk
/I
o
= 5
1.0
Figure 5. Current Derating
60
80
100
120
T
L
, LEAD TEMPERATURE (°C)
140
160
Figure 6. Forward Power Dissipation
0.5
1.0
1.5
2.0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
2.5
http://onsemi.com
3
MRS1504T3G, NRVS1504T3G
100
T
J
= 25°C
C, CAPACITANCE (pF)
10
1.0
0
10
20
30
40
50
60
V
R
, REVERSE VOLTAGE (VOLTS)
70
80
Figure 7. Capacitance
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED
1.0
50%
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
T, TIME (s)
0.1
1.0
10
100
Figure 8. Thermal Response, Junction−to−Lead
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
20%
0.1
10%
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 9. Thermal Response, Junction−to−Ambient
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4
MRS1504T3G, NRVS1504T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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