VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 AFRED Pt
®
FEATURES
Base
common
cathode
2
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and
soft recovery
3
Anode
1
2
Common
cathode
• Low leakage current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
TO-252AA (D-PAK)
Anode
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-252AA (D-PAK)
2x4A
200 V
0.71 V
23 ns
175 °C
Common cathode
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 164 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
8
80
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 4 A
Forward voltage per leg
V
F
I
F
= 8 A
I
F
= 4 A, T
J
= 150 °C
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
Reverse leakage current per leg
I
R
C
T
L
S
T
J
= 125 °C, V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
Junction capacitance per leg
Series inductance
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
-
TYP.
-
0.87
0.95
0.71
0.8
-
-
-
17
8
MAX.
-
0.95
1.10
0.80
1.0
4
40
80
-
-
pF
nH
μA
V
UNITS
Revision: 05-Oct-16
Document Number: 93261
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
TYP.
23
20
27
2
3.4
20
46
MAX.
27
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, per leg
junction to case
per device
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
-65
-
-
TYP.
-
2.7
1.35
0.3
0.01
8CWH02FN
MAX.
175
3.2
1.6
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (μA)
T
J
= 175 °C
10
1
0.1
T
J
= 75 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 175 °C
1
T
J
= 25 °C
0.1
0.2
T
J
= 125 °C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
100
150
200
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 05-Oct-16
Document Number: 93261
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
100
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
175
170
DC
165
160
155
see
note
150
0
1
2
3
4
5
6
(1)
5
RMS Limit
Average Power Loss (W)
4
3
Square
wave (D = 0.50)
rated V
R
applied
2
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1
0
0
1
2
3
4
5
6
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 05-Oct-16
Document Number: 93261
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
70
60
50
4 A, T
J
= 125 °C
40
35
30
Q
rr
(nC)
t
rr
(nC)
25
20
15
4 A, T
J
= 125 °C
40
30
20
10
0
100
4 A, T
J
= 25 °C
4 A, T
J
= 25 °C
10
5
0
100
1000
1000
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 05-Oct-16
Document Number: 93261
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
8
2
C
3
W
4
H
5
02
6
FN
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
C = common cathode
Package identifier:
W = D-PAK
H = hyperfast recovery
Voltage rating (02 = 200 V)
FN = TO-252AA
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8CWH02FN-M3
VS-8CWH02FNTR-M3
VS-8CWH02FNTRL-M3
VS-8CWH02FNTRR-M3
QUANTITY PER T/R
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95375
Revision: 05-Oct-16
Document Number: 93261
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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