MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
SWITCHMODE
Power Rectifiers
This series is designed for use in switching power supplies,
inverters and as free wheeling diodes.
Features
http://onsemi.com
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50−600 VOLTS
1
4
3
•
•
•
•
•
•
•
Ultrafast 25 and 50 Nanosecond Recovery Time
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Reverse Voltage to 600 V
ESD Ratings:
♦
Machine Model = C (> 400 V)
♦
Human Body Model = 3B (> 16,000 V)
•
SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
TO−220AC
CASE 221B
PLASTIC
TO−220 FULLPAK
CASE 221E
STYLE 1
•
Case: Epoxy, Molded
•
Weight: 1.9 Grams (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAMS
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
AY
WWG
U8xx
KA
AYWWG
MURF860
KA
A
Y
WW
U8XX
G
KA
=
=
=
=
Assembly Location
Year
Work Week
Device Code
xx = 05, 10, 15, 20, 40, or 60
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
June, 2013
−
Rev. 12
1
Publication Order Number:
MUR820/D
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MAXIMUM RATINGS
MUR/SUR8
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz), T
C
= 150°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FM
I
FSM
T
J
, T
stg
805
50
810
100
815
150
820
200
840
400
860
600
Unit
V
8.0
16
100
−65
to +175
A
A
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
MUR/SUR8
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
MURF860
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambiente
MURF860
Symbol
R
qJC
R
qJC
R
qJA
R
qJA
805
810
3.0
4.75
73
75
815
820
840
2.0
860
Unit
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
MUR/SUR8
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150°C)
(i
F
= 8.0 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 150°C)
(Rated DC Voltage, T
J
= 25°C)
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
805
810
815
820
840
1.00
1.30
860
1.20
1.50
Unit
V
0.895
0.975
250
5.0
35
25
i
R
500
10
60
50
mA
t
rr
ns
http://onsemi.com
2
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
100
IR, REVERSE CURRENT (
m
A)
70
50
1000
T
J
= 175°C
100
10
30
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
100°C
25°C
1.0
0.1
0.01
0
20
40
60
80 100 120 140 160
V
R
, REVERSE VOLTAGE (VOLTS)
180 200
10
7.0
5.0
Figure 2. Typical Reverse Current*
3.0
2.0
T
J
= 175°C
1.0
0.7
0.5
100°C
25°C
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RATED V
R
APPLIED
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
0.3
0.2
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
14
12
dc
10
8.0
6.0
4.0
2.0
0
0
20
40
60
80
100
120
140
160
180
200
T
A
, AMBIENT TEMPERATURE (°C)
dc
SQUARE WAVE
SQUARE WAVE
R
qJA
= 16°C/W
R
qJA
= 60°C/W
(NO HEAT SINK)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
dc
T
J
= 175°C
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
http://onsemi.com
3
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR840G, SUR8840G
100
IR, REVERSE CURRENT (
m
A)
70
50
1000
T
J
= 175°C
150°C
10
100°C
25°C
1.0
100
30
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
0.1
0.01
0
50
100
150 200 250 300 350 400
V
R
, REVERSE VOLTAGE (VOLTS)
450 500
10
7.0
5.0
T
J
= 175°C
3.0
100°C
2.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RATED V
R
APPLIED
25°C
Figure 7. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
1.0
0.7
0.5
0.3
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 6. Typical Forward Voltage
Figure 8. Current Derating, Case
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
14
12
10
8.0
6.0
4.0
2.0
0
0
20
40
60
80
100
120
140
160
180
200
T
A
, AMBIENT TEMPERATURE (°C)
SQUARE WAVE
dc
SQUARE WAVE
dc
R
qJA
= 16°C/W
R
qJA
= 60°C/W
(NO HEAT SINK)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
dc
T
J
= 175°C
Figure 9. Current Derating, Ambient
Figure 10. Power Dissipation
http://onsemi.com
4
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR860G, MURF860G
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
100
IR, REVERSE CURRENT (
m
A)
T
J
= 150°C
100°C
10
25°C
1000
T
J
= 150°C
100
10
100°C
1.0
25°C
1
0.1
0.01
100
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
200
300
500
400
V
R
, REVERSE VOLTAGE (VOLTS)
600
Figure 11. Typical Forward Voltage
Figure 12. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
SQUARE WAVE
dc
RATED V
R
APPLIED
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
140
160
180 200
SQUARE WAVE
dc
SQUARE WAVE
dc
R
qJA
= 16°C/W
R
qJA
= 60°C/W
(NO HEAT SINK)
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 13. Current Derating, Case
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
10,000
Figure 14. Current Derating, Ambient
I FSM , NON-REPETITIVE SURGE CURRENT (A)
10
SQUARE
WAVE
dc
1,000
T
J
= 175°C
100
10
100
1,000
10,000
t
p
, SQUARE WAVE PULSE DURATION (ms)
6.0
7.0
8.0
9.0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 15. Power Dissipation
Figure 16. Typical Non−Repetitive Surge
Current
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
http://onsemi.com
5